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2SA1190
Silicon PNP Epitaxial
REJ03G0640-0200 (Previous ADE-208-1012) Rev.2.00 Aug.10.2005
Application
* Low frequency low noise amplifier * Complementary pair with 2SC2855 and 2SC2856
Outline
RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1))
1. Emitter 2. Collector 3. Base
3 2 1
Absolute Maximum Ratings
(Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Rating -90 -90 -5 -100 100 400 150 -55 to +150 Unit V V V mA mA mW C C
Rev.2.00 Aug 10, 2005 page 1 of 6
2SA1190
Electrical Characteristics
(Ta = 25C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current trnsfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE*1 VCE(sat) VBE(sat) fT Cob NF Min -90 -90 -5 -- -- 250 -- -- -- -- -- 2SA1190 Typ Max -- -- -- -- -- -- -- -0.1 -- -0.1 -- 800 -0.05 -0.7 130 3.2 0.15 -0.15 -1.0 -- -- 1.5 Unit V V V A A Test conditions IC = -10 A, IE = 0 IC = -1 mA, RBE = IE = -10 A, IC = 0 VCB = -70 V, IE = 0 VEB = -2 V, IC = 0 VCE = -12 V, 2 IC = -2 mA* V V MHz pF dB IC = -10 mA, 2 IB = -1 mA* VCE = -6 V, IC = -10 mA VCB = -10 V, IE = 0, f = 1 MHz VCE = -6 V, IC = -0.1 mA, Rg = 10 k f = 1 kHz VCE = -6 V, IC = -0.1 mA, Rg = 10 k f = 10 Hz VCB = -6 V, IC = -10 mA, Rg = 0, f = 1 kHz
--
0.2
2.0
dB
Noise voltage referred to input
en
--
0.7
--
nV/ Hz
Notes: 1. The 2SA1190 and 2SA1191 are grouped by hFE as follows. 2. Pulse test D E 250 to 500 400 to 800
Rev.2.00 Aug 10, 2005 page 2 of 6
2SA1190
Main Characteristics
Maximum Collector Dissipation Curve
Collector power dissipation Pc (mW)
600 -20
Typical Output Characteristics (1)
0
Collector Current IC (mA)
-3
-16
PC =4
-2
5
400
-2 0
-12
00 mW
-1 5
-8
200
- 10
-5 A
-4
IB = 0
0
50
100
150
0
-20
-40
-60
-80
-100
Ambient Temperature Ta (C)
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics (2)
-10
-20
Typical Transfer Characteristics
-100
Collector Current IC (mA)
-8
-6
-14 -12 -10
Collector Current IC (mA)
-18 -1 6
VCE = -6 V Pulse -10
Ta = 75C 25 -25
-4
-8
-6
-1.0
-2
-4 -2 A
IB = 0
-0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0
0
-4
-8
-12
-16
-20
Collector to Emitter Voltage VCE (V) Collector Cutoff Current vs. Collector to Base Voltage
Collector cutoff current ICBO (pA) Collector cutoff current ICEO (nA)
-10.000 IE = 0 -1,000 Ta = 75C 25 -25 -10 -1,000
Base to Emitter Voltage VBE (V) Collector Cutoff Current vs. Collector to Emitter Voltage
RBE = -100 Ta = 75C 25 -10 -25 -1.0
-100
-1 0 -20 -40 -60 -80 -100
-0.1 0 -20 -40 -60 -80 -100
Collector to Base Voltage VCB (V)
Collector to Emitter Voltage VCE (V)
Rev.2.00 Aug 10, 2005 page 3 of 6
2SA1190
Emitter Cutoff Current vs. Emitter to Base Voltage
-1,000
Collector to Emitter Breakdown Voltage vs. Base to Emitter Resistance
Collector to emitter breakdown voltage V(BR) CER (V)
-190 Typical Value IC = -1 mA
Emitter cutoff current IEBO (pA)
IC = 0 Ta = 75C -100
-180
-170
-10 25 -1.0 -25
-160
-150
-0.1 0 -2 -4 -6 -8 -10
-140 10
100
1k
10 k
100 k
Emitter to Base Voltage VEB (V)
DC Current Transfer Ratio vs. Collector Current
Collector to emitter saturation voltage VCE (sat) (V)
1,000
Base to Emitter Resistance RBE ()
Collector to Emitter Saturation Voltage vs. Collector Current
-1.0 IC = 10 IB Pulse -0.3
DC current transfer ratio hFE
Ta = 75C 300
-25
25
100
-0.1
Ta = 75C -25
30
VCE = -12 V Pulse
-0.03
25
10 -1
-3
-10
-30
-100
-0.01 -1
-3
-10
-30
-100
Collector Current IC (mA)
Base to Emitter Saturation Voltage vs. Collector Current
IC = 10 IB Pulse -3
Collector Current IC (mA)
Gain Bandwidth Product vs. Collector Current
Gain bandwidth product fT (MHz)
1,000
VCE = -6 V
Base to emitter saturation voltage VBE (sat) (V)
-10
500
200 100 50
-1.0
25
Ta = -25C 75
-0.3
20 10 -0.5 -1.0
-0.1 -1
-3
-10
-30
-100
-2
-5
-10 -20
-50
Collector Current IC (mA)
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 4 of 6
2SA1190
Collector Output Capacitance vs. Collector to Base Voltage
Collector output capacitance Cob (pF)
100 f = 1 MHz IE = 0 30
Noise voltage referred to input en (nV/Hz)
Noise Voltage referred to Input vs. Collector Current
10 VCE = -6 V Rg = 0 f = 1 kHz 3
10
1.0
3
0.3
1 -1
-3
-10
-30
-100
0.1 -0.1
-0.3
-1.0
-3
-10
Collector to Base Voltage VCB (V)
Noise Voltage referred to Input vs. Signal Source Resistance
1,000 VCE = -6 V f = 1 kHz 100 IC = -10 mA 10 -1
-0.1
Collector Current IC (mA)
Noise Voltage referred to Input vs. Collector to Emitter Voltage
1.0
Noise voltage referred to input en (nV/Hz)
Noise voltage referred to input en (nV/Hz)
0.9
0.8
0.7
1.0
0.6
IC = -1 mA Rg = 0 f = 1 kHz -3 -10 -30 -100
0.1 10
100
1k
10 k
100 k
0.5 -1
Signal Source Resistance Rg ()
Noise Voltage referred to Input vs. Frequency
2.0 VCE = -6 V Rg = 0
Collector to Emitter Voltage VCE (V)
Noise voltage referred to input en (nV/Hz)
1.6
1.2 IC = -1 mA -10 0.4
0.8
0 10
100
1k
10 k
100 k
Frequency f (Hz)
Rev.2.00 Aug 10, 2005 page 5 of 6
2SA1190
Package Dimensions
JEITA Package Code
SC-43A
RENESAS Code
PRSS0003DA-A
Package Name TO-92(1) / TO-92(1)V
MASS[Typ.] 0.25g
Unit: mm
4.8 0.3
3.8 0.3
2.3 Max
0.55 Max
0.7
0.60 Max
12.7 Min
5.0 0.2
0.5 Max
1.27 2.54
Ordering Information
Part Name 2SA1190DTZ-E 2SA1190ETZ-E 2500 Quantity Shipping Container Hold Box, Radial Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Aug 10, 2005 page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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