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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV39 DESCRIPTION *Low Collector Saturation Voltage: VCE(sat)= 0.8V (Max.) @IC= 7.5A *High Switching Speed APPLICATIONS *Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25) SYMBOL VCEV VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage VBE=-1.5V Collector-Emitter Voltage Emitter-Base Voltage VALUE 160 90 7 UNIT V Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current- Peak w w scs .i w 25 45 6 9 120 200 -65~200 V V A .cn mi e A A A IBM PC Tj Tstg Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.46 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUV39 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH 90 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7.5A; IB= 0.375A 0.8 V VCE(sat)-2 VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 15A ;IB= 1.5A IC= 20A ;IB= 2.5A 0.9 V Collector-Emitter Saturation Voltage 1.2 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 15A ;IB= 1.5A VBE(sat)-2 ICER Base-Emitter Saturation Voltage Collector Cutoff Current ICEV Collector Cutoff Current IEBO Emitter Cutoff Current Switching Times, Resistive Load s s s w ww scs .i IC= 20A ;IB= 2.5A VCE= 160V;RBE= 10 VCE= 160V;RBE= 10;TC=100 VCE= 160V;VBE= -1.5V VCE= 160V;VBE= -1.5V;TC=100 VEB= 5V; IC= 0 .cn mi e 1.7 V 1.9 1.0 5.0 1.0 5.0 1.0 V mA mA mA tr ts tf Rise Time IC= 20A; IB1= 2.5A; VCC= 72V; RB2= 1; VBB= -5V, tp= 30s 1.1 Storage Time 1.0 Fall Time 0.25 isc Websitewww.iscsemi.cn |
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