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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BUP40 DESCRIPTION *High Collector Current-IC= -6A *Low Collector Saturation Voltage : VCE(sat)= -0.4V(Max)@ IC= 3A, IB= -0.1A *High Switching Speed *Complement to Type BUP41 B APPLICATIONS *For audio amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE -60 V -50 V -6 V -6 A 10 W 150 UNIT .cn mi e IC Collector Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC TJ Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUP40 MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.1A B -1.1 V VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.1A B -1.4 V A ICBO Collector Cutoff Current VCB= -40V; IE= 0 -1.0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -1.0 A hFE-1 DC Current Gain IC= -1A; VCE= -2V 100 500 hFE-2 DC Current Gain IC= -5A; VCE= -5V fT Current-Gain--Bandwidth Product COB Output Capacitance w w scs .i w IC= -1A; VCE= -5V IE= 0; VCB= -10V .cn mi e 40 150 MHz 40 pF isc Websitewww.iscsemi.cn 2 |
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