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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5070 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed *High Reliability *Built-in Damper Diode APPLICATIONS *Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE UNIT 1500 V 800 V 6 V 2.5 A 10 A 50 W .cn mi e IC Collector Current- Continuous ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD5070 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A B 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A B 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 A IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 40 200 mA hFE DC Current Gain IC= 0.5A; VCE= 5V VECF C-E Diode Forward Voltage fT Current-Gain--Bandwidth Product tf Fall Time w ww scs .i IF= 2.5A IC= 0.5A; VCE= 10V IC= 2A, IB1= 0.6A; IB2= -1.2A RL= 100; VCC= 200V .cn mi e 8 2.0 V 3 MHz 0.4 s isc Websitewww.iscsemi.cn 2 |
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