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CHENMKO ENTERPRISE CO.,LTD SMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts APPLICATION * Power driver and Dc to DC convertor . CH882PT CURRENT 3 Ampere FEATURE * Small flat package. (DPAK) * Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A) * High speed switching time: tstg= 1.0uSec (typ.) * PC= 1.5 W (mounted on ceramic substrate). * High saturation current capability. .050 (1.27) .030 (0.77) .094 (2.38) .086 (2.19) .022 (0.55) .018 (0.45) DPAK .228(5..80) .217 (5.40) CONSTRUCTION * NPN Switching Transistor MARKING * hFE Classification Q: Q82 .110 (2.80) .087 (2.20) (1) (3) (2) .394 (10.00) .354 (9.00) .028 (0.70) .019 (0.50) .035 (0.90) .050 (1.27) .020 (0.51) P: 882 E: E82 .181 (4.60) .268 (6.80) .252 (6.40) .024 (0.60) CIRCUIT (1) B C (3) 1 Base 2 Emitter 3 Collector ( Heat Sink ) .023 (0.58) .018 (0.46) E (2) .020 (0.51) Dimensions in inches and (millimeters) DPAK MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature TA 25OC; Note 1 CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC ICM IBM PTOT TSTG TJ TAMB MIN. -55 -55 MAX. 40 30 5 3 3 0.5 2000 +150 +150 +150 UNITS Volts Volts Volts Amps Amps Amps mW o C C C o o Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2004-8 RATING CHARACTERISTIC CURVES ( CH882PT ) CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector Cut-off Current Emitter Cut-off Current CONDITION IE=0; VCB=30V IC=0; VEB=3V VCE=2V; Note 1 IC=0.02A IC=1.0A; Note 2 IC=2A; IB=0.2A IC=2A; IB=-0.2A IE=ie=0; VCB=10V; f=1MHz IC=0.02A; VCE=20V; f=100MHz SYMBOL ICBO IEBO MIN. TYPE MAX. 1.0 1.0 UNITS uA uA DC Current Gain hFE 30 100 - 160 0.3 1.0 55 100 500 0.5 2.0 Volts Volts pF MHz Collector-Emitter Saturation Voltage Base-Emitter Saturatio Voltage Collector Capacitance Transition Frequency VCEsat VBEsat CC fT SWITCHING TIMES ( Between 10% and 90% levels ) PARAMETERS Turn-on Time Storage Time Fall Time IB1 IB2 INPUT CONDITION OUTPUT SYMBOL ton ts tf MIN. - TYPE 0.1 1.0 0.1 MAX. - UNITS uSec uSec uSec IB2 30 ohmS 30V 20uSec IB1 IB1=-IB2=0.05A Duty cycle<1% Note : 1. Pulse test: tp 300uSec; 0.02. 2. hFE(2) Classification Q: 100 to 200, P: 160 to 320, E: 250 to 500. RATING CHARACTERISTIC CURVES ( CH882PT ) Typical Electrical Characteristics Figure 1. CC - Reverse VCB 3000 3000 Figure 2. Cutoff Frequency - IC COLLECTOR CAPACITANCE CC (pF) VCE=5V 1000 1000 100 CUTOFF FREQUENCY (MHz) 100 10 10 1 0.1 1 0.3 1.0 3.0 10 30 100 1 10 100 1000 COLLECTOR-BASE REVERSE BIAS VOLTAGE VCB (V) COLLECTOR CURRENT IC (mA) Figure 3. hFE - IC COLLECTOR POWER DISSIPATION PC (W) 1000 500 COMMON EMITTER VCE=2V Figure 4. PC - TA 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 (1) (1) Mounted on ceramic substrate ( 250mm 2x0.8t ) (2) No heat sink DC CURRENT GAIN hFE 300 100 (2) 50 30 10 10 30 100 300 1000 3000 COLLECTOR CURRENT IC (mA) 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE TA ( OC) Figure 5. VCE(sat) - IC COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 0.5 0.3 10 Figure 6. VBE(sat) - IC BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COMMON EMITTER COMMON EMITTER IC/IB=10 5 3 IC/IB=10 0.1 1 0.05 0.03 0.5 0.3 0.01 10 30 100 300 1000 3000 COLLECTOR CURRENT IC (mA) 0.1 10 30 100 300 1000 3000 COLLECTOR CURRENT IC (mA) RATING CHARACTERISTIC CURVES ( CH882PT ) Typical Electrical Characteristics Figure 9. Safe Operation Area 30000 10000 5000 3000 1000 500 300 100 50 30 10 0.1 Single nonrepetitive pulse TA=25OC Curve must be derated linearly with increase in temperature Tested without a substrate 0.3 1.0 3.0 10 30 100 COLLECTOR CURRENT IC (mA) 1 mS 100 mS 1S COLLECTOR-EMITTER VOLTAGE VCE (V) |
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