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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE52T DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 300V(Min) APPLICATIONS *Designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE 400 300 6 5 10 2 80 150 -65~150 UNIT V V V A A A W PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.56 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(on) ICEO ICES IEBO hFE-1 hFE-2 COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance CONDITIONS IC= 25mA; IB= 0 IC= 5A; IB= 2A B MJE52T MIN 300 TYP. MAX UNIT V 2.0 2.0 1.0 1.0 1.0 30 5 150 V V mA mA mA IC= 5A ; VCE= 10V VCE= 200V; IB=0 VCE= 400V; VBE= 0 VEB= 5V; IC=0 IC= 0.3A ; VCE= 10V IC= 5A ; VCE= 10V IE= 0 ; VCB= 10V; ftest=0.1MHz pF Switching times ton toff Turn-On Time Turn-Off Time 0.5 2.0 s s IC= 2.5A , IB1= -IB2= 0.5A VBE(off)= 5V; VCC= 125V isc Websitewww.iscsemi.cn 2 |
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