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PRELIMINARY
RT3J11M
Composite Transistor For high speed switching Silicon -channel MOSFET
DESCRIPTION
RT3J11M is a composite transistor built with two INJ0001AX chips in SC-88 package.
OUTLINE DRAWING
2.1 1.25 0.65 0.2
Unitmm
FEATURE
Input impedance is high, and not necessary to consider a drive electric current. Vth is low, and drive by low voltage is possible. Vth=0.61.2V Low on Resistance. Ron=7(TYP) High speed switching. Small package for easy mounting.
2.0
APPLICATION
high speed switching , Analog switching
0.65 0.13 00.1
Tr.1
0.9
0.65
Tr.2
TERMINAL CONNECTOR SOURCE1 GATE1 DRAIN2 SOURCE2 GATE2 :DRAIN1 JEITASC-88
MAXIMUM RATING (Ta=25)
SYMBOL VDSS VGSS ID PD Tch Tstg PARAMETER RATING UNIT V V mA mW
6 5 4
MARKING
Drain-source voltage Gate-source voltage Drain current Total power dissipationTa=25 Channel temperature Range of Storage temperature
-50 8 -100
150 125 -55125
. .
2 3
ISAHAYA ELECTRONICS CORPORATION
PRELIMINARY
RT3J11M
Composite Transistor For high speed switching Silicon -channel MOSFET
ELECTRICAL CHARACTERISTICS (Ta=25)
Symbol V(BR)DSS IGSS IDSS Vth Parameter Test conditions Limits Min Typ Max Unit
Drain-source breakdown voltage Gate-source leak current Zero gate voltage drain current Gate threshold voltage Forward transfer admittance Static drain-source on-state resistance Input capacitance Output capacitance Switching time
I D=-100A, VGS=0V V V V
GS=5V, VDS=0V DS
-50 GS
220 7 28 5.2 13 135
0.5 -50 -1.2 -
V A A V mS pF pF ns
=-50V ,VGS=0V
DS= V
I D=-250A, V
DS
-0.6 -
| Yfs |
RDS(ON) Ciss Coss tON tOFF
=-10V, I D=-0.1A
I D=-100mA, V GS=-4.0V V DS=-10V, V GS=0V,f=1MHz V V V
DS
=-10V, V
GS
=0V,f=1MHz
DD=-5V , I D=-10mA GS=0-5V
Switching time test condition
test circuit
0 IN
OUT
0V
RL -5V 10s VDD=-5V D.U.1% Common source Ta=25 50 VDD
input waveform
-5V VDS(ON
10%
90%
output waveform
VDD
ton
90%
10%
tr toff tf
ISAHAYA ELECTRONICS CORPORATION
TYPICAL CHARACTERISTICS
Ta=25
ID -VDS -10
-1.6V
Ta=25
ID -VDS(Low voltage region)
-100
-80 Drain current ID (mA)
-1.5V
-8 Drain current ID (mA)
-1.0V
-60
-1.4V
-6
-0.95V
-40
-1.3V -1.2V
-4
VGS=-0.9V
-20
-1.1V VGS=-1.0V
-2
-0.85V -0.8V
-0 -0 -5 Drain-Source voltage VDS (V) -10
-0 -0 -0.1 -0.2 -0.3 -0.4 -0.5 Drain-Source voltage VDS (V)
IDR -VDS -100 Drain reverse current IDR (mA) Ta=25 VGS=0V Drain current ID (mA) -1000 Ta=25 VDS=-10V -100
ID -VGS
-10
-10
-1 0 0.5 1 1.5 Drain-Source voltage VDS (V) 2
-1 -0 -1 -2 -3 -4 Gate-Source voltage VGS (V) -5
|Yfs| - ID 1000 Forward transfet admittance |Yfs| (mS) Ta=25 VDS=-10V 100 Drain-Source ON voltage VDS(ON)(mV) -100 -1000 Ta=25 VGS=-4V
VDS(ON) - ID
10
-10
1 -1 -10 -100 Drain current ID (mA) -1000
-1 -1 -10 Drain currentID (mA) -100
t - ID 10000 Ta=25 toff Switching time t (ns) 1000
C - VDS
100
Capacitance C (pF)
tf
Ciss
100
10
10
ton tr
Ta=25 VGS=0V
Coss
1 -0.1
-1 -10 Drain current ID (mA)
-100
1 -0.1
-1 -10 Drain-Source voltage VDS (V)
-100
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Apr.2007

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