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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB743 DESCRIPTION *With TO-126 package *Low collector saturation voltage *Excellent hFE linearity APPLICATIONS *For audio frequency power amplifier and general purpose applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Ta=25 CONDITIONS Open emitter Open base Open collector VALUE -40 -30 -5 -3 -5 -0.6 1.0 UNIT V V V A A A PC Collector power dissipation TC=25 10 150 -55~150 W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB743 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -30 V VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -2.0 V VBEsat Base-emitter saturation voltage IC=-1.5A ;IB=-0.15A -2.0 V A ICBO Collector cut-off current VCB=-40V; IE=0 -1 IEBO Emitter cut-off current VEB=-5V; IC=0 -1 A hFE-1 DC current gain IC=-20mA ; VCE=-5V 30 hFE-2 DC current gain IC=-1A ; VCE=-5V 60 320 fT Transition frequency IC=-0.1A ; VCE=-5V 55 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB743 Fig.2 Outline dimensions 3 |
Price & Availability of 2SB743 |
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