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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB551 DESCRIPTION *Low Collector Saturation Voltage: VCE(sat)= -1.2V(Typ.)@IC= -2A *High Power Dissipation: PC= 25W(Max)@TC=55 APPLICATIONS *Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous Collector Power Dissipation @TC= 25 Junction Temperature ww w scs .i VALUE -50 -50 -4 -3 25 150 UNIT V V .cn mi e V A PC W TJ Tstg Storage Temperature -45~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB551 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= -50 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 -50 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -4 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A B 1.2 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -4V 1.5 V ICBO Collector Cutoff Current VCB= -20V; IE= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain--Bandwidth Product hFE-1 Classifications A 35-70 B 60-120 w w C 100-200 scs .i w IC= -1A; VCE= -4V IC= -0.1A; VCE= -4V .cn mi e 35 35 15 -0.1 mA 200 IC= -0.5A; VCE= -4V MHz isc Websitewww.iscsemi.cn |
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