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EID8596A1-12
UPDATED 07/12/2007
8.50 - 9.60 GHz 12-Watt Internally-Matched Power FET
FEATURES
* * * * * * * 8.50 - 9.60 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.5 dBm Output Power at 1dB Compression 9.0 dB Power Gain at 1dB Compression 35% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH
DESCRIPTION
The EID8596A1-12 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics' unique PHEMT transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25C)
SYMBOL P1dB G1dB G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ 3600mA Gain at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ 3600mA Gain Flatness f = 8.50-9.60GHz VDS = 10 V, IDSQ 3600mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ 3600mA f = 8.50-9.60GHz Drain Current at 1dB Compression f = 8.50-9.60GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance2 VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 60 mA MIN 40.5 8.0 TYP 41.5 9.0 0.6 35 4000 6500 -1.2 2.5 4600 7500 -2.5 3.0
o
MAX
UNITS dBm dB dB % mA mA V C/W
Notes: 1. Tested with 50 Ohm gate resistor. 2. Overall Rth depends on case mounting.
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4 Revised July 2007
EID8596A1-12
UPDATED 07/12/2007
8.50 - 9.60 GHz 12-Watt Internally-Matched Power FET
CHARACTERISTIC VALUE 10 V -3.0 V IDSS 120 mA @ 3dB compression 42 W 150C -65/+150C
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Total Power Dissipation Channel Temperature Storage Temperature
Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the following equation PT < (TCH -TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) - (POUT - PIN).
PERFORMANCE DATA
Typical S-Parameters (T= 25C, 50 system, de-embedded to edge of package) VDS = 10 V, IDSQ 3600mA
S11 and S22
6 0.
Swp Max 10GHz
2. 0
1.0
0.8
20
S21 and S12
-1.0
-0.8
-0 .6
-3 .
0
0
-10.0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
.4 -0
0. 4
.0
-0.8
-1.0
S[2,2] * EID8596-12
1.0
-0 .
-2
6
FREQ (GHz)
--- S11 --MAG ANG
8.00 8.25 8.50 8.75 9.00 9.25 9.50 9.75 10.00 10.25 10.50
0.665 0.628 0.575 0.506 0.426 0.343 0.273 0.235 0.223 0.200 0.209
13.310 -10.290 -33.260 -58.660 -88.220 -124.370 -168.710 139.600 86.780 27.440 -47.720
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
-3
.0
S[1,1] * EID8596-12
2. 0
Swp Min 8GHz
-5. 0
2 -0.
-10.0
2 -0.
-5. 0
5.0
S21 and S12 (dB)
-4 .
0.2
-4 .
0
.4 -0
-2 .0
0. 4
3.
0
10
4. 0
0
10.0
DB(|S[2,1]|) * EID8596-12 DB(|S[1,2]|) * EID8596-12
-10
10.0
3. 0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
0
4.
5.0
0
10.0
0.2
-20
-30 8 8.5 9 Frequency (GHz) 9.5 10
0. 6
0.8
--- S21 --MAG ANG
--- S12 --MAG ANG
--- S22 --MAG ANG
3.042 3.060 3.064 3.146 3.230 3.263 3.280 3.232 3.140 3.023 2.818
-101.000 -126.890 -151.970 -177.830 154.710 126.660 97.610 67.230 36.090 3.490 -30.940
0.043 0.048 0.051 0.056 0.060 0.063 0.065 0.066 0.066 0.066 0.063
-143.450 -171.390 165.500 139.920 114.480 87.140 59.430 28.560 -1.380 -36.490 -72.920
0.386 0.383 0.405 0.430 0.437 0.410 0.373 0.309 0.235 0.210 0.291
175.740 144.740 116.280 91.480 68.710 45.740 21.620 -5.450 -41.240 -95.270 -146.970
page 2 of 4 Revised July 2007
EID8596A1-12
UPDATED 07/12/2007
8.50 - 9.60 GHz 12-Watt Internally-Matched Power FET
Power De-rating Curve
Power Dissipation vs. Temperature
48 42 Total Power Dissipation (W) 36 30 24 18 12 6 0 0 25 50 75 100 Case Temperature (C) 125 150 Safe Operating Region Potentially Unsafe Operating Region
Typical Power Data (VDS = 10 V, IDSQ = 3600 mA)
P-1dB & G-1dB vs Frequency
43 42 41
P-1dB (dBm)
14 13
40 39 38 37 36 8.4 8.6
P-1dB (dBm)
G-1dB (dB)
12 11 10 9
8.8
9.0
9.2
9.4
9.6
9.8
Frequency (GHz)
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
G-1dB (dB)
page 3 of 4 Revised July 2007
EID8596A1-12
UPDATED 07/12/2007
8.50 - 9.60 GHz 12-Watt Internally-Matched Power FET
PACKAGE OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
SOURCE
Excelics
EID8596A1-12
.024 .421
.827.010 .669
.120 MIN
YYWW
SN
.120 MIN
.125 .508.008 .442 .168.010
ALL DIMENSIONS IN INCHES
.004 .063 .004 .105.008
ORDERING INFORMATION
Part Number EID8596A1-12
Notes:
Grade1 Industrial
fTest (GHz) 8.50-9.60 GHz
P1dB (min) 40.5
1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in "Electrical Characteristics" table.
DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 4 of 4 Revised July 2007

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