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| SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3400(AO3400) Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) +0.1 2.4-0.1 MOSFET IC SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm RDS(ON) RDS(ON) RDS(ON) 28m 33m 52m (VGS = 10V) (VGS = 4.5V) (VGS = 2.5V) +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate 2.Emitter 2. Source +0.1 0.38-0.1 0-0.1 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25 TA=70 Pulsed Drain Current * Power Dissipation TA=25 TA=70 Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction and Storage Temperature Range RthJA Rthc TJ, TSTG IDM PD Symbol VDS VGS ID Rating 30 12 5.8 4.9 30 1.4 1 85 43 -55 to 150 /W /W W A Unit V V * Repetitive rating, pulse width limited by junction temperature. www.kexin.com.cn 1 SMD Type KO3400(AO3400) Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Symbol VDSS IDSS IGSS VGS(th) ID=250 Testconditons A, VGS=0V Min 30 IC MOSFET Typ Max Unit V VDS=24V, VGS=0V VDS=24V, VGS=0V ,TJ=55 VDS=0V, VGS= VDS=VGS ID=250 VGS=10V, ID=5.8A 12V A 0.7 1.1 22.8 TJ=125 32 27.3 43.3 30 10 15 823 VGS=0V, VDS=15V, f=1MHz 99 77 VGS=0V, VDS=0V, f=1MHz 1.4 9.7 VGS=4.5V, VDS=15V, ID=5.8A 1.6 3.1 3.3 VGS=10V, VDS=15V, RL=2.7 ,RGEN=3 4.8 26.3 4.1 IF=5A, dI/dt=100A/ s IF=5A, dI/dt=100A/ s 16 8.9 1 A 5 100 1.4 28 39 33 52 m m A S 1050 pF pF pF 2 12 nC nC nC 5 7 40 6 20 12 2.5 30 ns ns ns ns ns nC A A V nA V m Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=5.8A VGS=4.5V, ID=5A VGS=2.5V, ID=4A On state drain current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Maximum Body-Diode Continuous Current Pulsed Body-Diode Current * Diode Forward Voltage ID(ON) gFS Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr IS ISM VSD VGS=4.5V, VDS=5V VDS=5V, ID=5A IS=1A,VGS=0V 0.71 1 * Repetitive rating, pulse width limited by junction temperature. 2 www.kexin.com.cn |
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