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SMD Type Silicon Epitaxial Planar Pin Diode HVU133 Diodes SOD-323 +0.1 1.7-0.1 Unit: mm Low capacitance.(C=1.0pF max) +0.1 2.6-0.1 Low forward resistance. (rf=0.7 max) 0.475 0.375 1.0max A bsolute M axim um R atings T a = 25 P aram eter R everse voltage P ow er dissipation Junction tem perature S torage tem perature S ym bol VR Pd Tj T stg V alue 30 150 125 -55 to +125 U nit V mW Electrical Characteristics Ta = 25 Param eter Reverse voltage Reverse current Forward voltage Capacitance Forward resistance Sym bol VR IR VF C1 C6 rf Conditions IR = 1 A Min 30 100 0.85 1.0 0.9 0.55 0.7 Typ Max Unit V nA V pF VR = 25 V IF = 2 m A VR = 1 V, f = 1 MHz VR = 6 V, f = 1 MHz IF = 2 m A, f = 100 MHz Marking Marking P3 +0.05 0.1-0.02 +0.1 1.3-0.1 Features +0.05 0.3-0.05 +0.05 0.85-0.05 www.kexin.com.cn 1 |
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