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AOD452A TM N-Channel SDMOS POWER Transistor General Description The AOD452A/L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. AOD452A and AOD452AL are electrically identical. -RoHS Compliant -AOD452AL is Halogen Free TO-252 D-PAK Features VDS (V) = 25V ID = 55A RDS(ON) < 8m RDS(ON) <14m (V GS = 10V) (V GS = 10V) (V GS = 4.5V) 100% UIS Tested! 100% Rg Tested! Top View D Bottom View D S G S G G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current Avalanche Current C C C Maximum 25 20 55 43 120 120 35 31 50 25 2.5 1.6 -55 to 175 Units V V TC=25C TC=100C ID IDM ISM IAR EAR PD PDSM TJ, TSTG TC=25C A Pulsed Forward Diode CurrentC Repetitive avalanche energy L=50H Power Dissipation B Power Dissipation A mJ W W C TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case B Maximum Junction-to-TAB B Symbol A A t 10s Steady-State Steady-State Steady-State RJA RJC RJC-TAB Typ 14.2 39 2.5 2.7 Max 20 50 3 3.2 Units C/W C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD452A Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=30A IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 990 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 210 125 1.1 18 VGS=10V, VDS=12.5V, ID=30A 9 3 4.5 VGS=10V, VDS=12.5V, RL=0.42, RGEN=3 IF=30A, dI/dt=500A/s 2 Conditions ID=250uA, VGS=0V VDS=25V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=30A TJ=125C Min 25 Typ Max Units V 10 50 100 1.2 120 6 8.6 11.5 50 0.7 1 55 1180 275 175 1.7 21.7 11 4 6.4 6.8 13.8 21.5 8.7 8.4 13 10.6 16 13 20 1450 350 245 2.5 26 13 5 9 8 12 14 2 3 A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/s A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev0 : July 2008 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD452A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 60 ID (A) 4V 40 20 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 18 16 Normalized On-Resistance 14 RDS(ON) (m) 12 10 8 6 4 2 0 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 5 10 0.8 0 25 50 75 100 125 150 175 VGS=10V 1.8 1.6 1.4 1.2 1 VGS=4.5V VGS=10V ID=30A 2 VGS=3.5V ID(A) 10V 6V 4.5V 7V 60 40 20 0 0 1 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics 125C 25C 100 5V 80 VDS=5V VGS=4.5V ID=20A 17 5 2 10 0 200 Temperature (C) 18 Figure 4: On-Resistance vs. Junction Temperature 30 ID=30A 25 20 RDS(ON) (m) 15 10 25C 5 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C IS (A) 1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 125C 25C 40 Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD452A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=12.5V ID=30A Capacitance (pF) 1800 1600 1400 1200 1000 800 600 400 200 0 0 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 25 0 0 Crss 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 5 25 Coss Ciss 8 VGS (Volts) 6 4 2 1000.0 100.0 ID (Amps) 10.0 1.0 0.1 0.0 0.01 10s 200 10s Power (W) 160 120 80 40 0 0.0001 RDS(ON) limited DC 100s 1ms 10ms TJ(Max)=175C TA=25C TJ(Max)=175C TC=25C 17 5 2 10 0.1 1 VDS (Volts) 10 100 0.001 0.01 0.1 1 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 0 10 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 1 0.1 PD Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD452A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 ID(A), Peak Avalanche Current 60 50 40 30 20 10 0 0.000001 TA=150C TA=125C TA=100C TA=25C Power Dissipation (W) 60 50 40 30 20 10 0 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 60 50 Current rating ID(A) 10000 TA=25C 1000 Power (W) 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) 100 17 5 2 10 10 1 0 0 0 0.01 0.1 1 10 100 1000 0 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 0.1 PD Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 0.01 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD452A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 20 Qrr (nC) 15 10 5 0 0 5 10 15 20 25 30 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25 20 Qrr (nC) 15 10 5 0 0 Irm 200 400 600 800 Qrr Is=20A 125C 25C 125C 25C 10 8 6 4 2 0 1000 15 12 9 6 3 0 0 200 400 600 800 125 S 25C 125C trr trr (ns) Irm (A) 25C 1.5 1 0.5 0 1000 S di/dt (A/s) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt Qrr Irm 25C 125C 25C di/dt=800A/us 125C 12 10 8 Irm (A) 6 4 2 0 16 14 12 trr (ns) 10 8 6 4 2 0 0 5 10 15 20 25 30 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 2.5 2 S trr di/dt=800A/us 125C 3 2.5 2 125C 1 0.5 0 25C Is=20A di/dt (A/s) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Alpha & Omega Semiconductor, Ltd. www.aosmd.com S 25C 1.5 AOD452A Gate Charge Test Circuit & W aveform Vgs Qg + VDC 10V VDC DUT + Vds - Qgs Qgd Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Rg Vgs Vgs DUT VDC + Vdd - 90% 10% Vgs t d(on) t on tr t d(off) t off tf Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L Vds Id Vgs E AR= 1/2 LIAR Vds Vgs 2 BVDSS VDC + Vdd - Rg Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + DUT Q rr = - Idt Vgs t rr Vds - Isd Vgs L Isd IF VDC + Vdd Vds dI/dt I RM Vdd Ig Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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