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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1344 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage DARLINGTON Complement to type 2SD2025 APPLICATIONS For low frequency power amplifier and power driver applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM HAN C PARAMETER Open base Fig.1 simplified outline (TO-220Fa) and symbol IN Collector-base voltage SEM GE CONDITIONS OND IC TOR UC VALUE -100 -100 -7 -8 -10 UNIT V V V A A Open emitter Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Open collector Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 2 W 30 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1344 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(BR)CEO Collector-emitter breakdown voltage IC=-5mA; IB=0 -100 V V(BR)CBO Collector-base breakdown voltage IC=-50|I A; IE=0 -100 V VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-6mA -1.0 -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 |I A IEBO Emitter cut-off current VEB=-5V; IC=0 -3.0 mA hFE DC current gain IC=-2A ; VCE=-3V 1000 20000 fT COB IN Transition frequency Output capacitance IC=-0.5A ; VCE=-5V ANG CH EMIC ES IE=0 ; VCB=-10V;f=1MHz OND TOR UC 12 90 MHz pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1344 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance: A 0.15 mm) 3 |
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