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Datasheet File OCR Text: |
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB707 2SB708 DESCRIPTION With TO-220C package Complement to type 2SD568/569 APPLICATIONS For low frequency power amplifier low speed switching industrial use PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO PARAMETER Collector-base voltage VCEO VEBO IC ICM IB INCH Base current Collector-emitter voltage ANG 2SB707 EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -80 -60 -80 -7 -7 -15 -3.5 UNIT V V 2SB708 Emitter-base voltage V A A A Collector current Collector current-peak Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 1.5 W 40 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS 2SB707 2SB708 SYMBOL MIN TYP. MAX UNIT 2SB707 V(BR)CEO Collector-emitter breakdown voltage 2SB708 IC=-10mA; IB=0 -60 V -80 VCEsat Collector-emitter saturation voltage IC=-5A;IB=-0.5 A -0.5 V VBEsat Base-emitter saturation voltage IC=-5A;IB=-0.5 A -1.5 V ICBO Collector cut-off current VCB=-60V; IE=0 -10 |I A IEBO Emitter cut-off current VEB=-5V; IC=0 -10 |I A hFE-1 DC current gain hFE-2 hFE-2 classifications R 40-80 DC current gain O Y 60-120 100-200 IC=-3A ; VCE=-1V 40 200 IC=-5A ; VCE=-1V 20 HAN INC SEM GE OND IC TOR UC 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB707 2SB708 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
Price & Availability of 2SB707 |
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