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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB696 DESCRIPTION *With TO-3 package *High power dissipation APPLICATIONS *Power amplifier applications *Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -150 -120 -6 -8 80 150 -40~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-50mA ;IB=0 IC=-5mA ;IE=0 IE=-5mA ;IC=0 IC=-4A; IB=-0.4A IC=-1A ; VCE=-5V VCB=-80V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IC=-1A ; VCE=-5V 40 20 15 MIN -120 -150 -6 2SB696 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V V V -2.5 -1.5 -0.1 -0.1 320 V V mA mA MHz hFE-1 Classifications C 40-80 D 60-120 E 100-200 F 160-320 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB696 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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