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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB689 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO = -100V(Min) *High Power Dissipation *Wide Area of Safe Operation APPLICATIONS *Designed for low frequency power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE -100 -100 -4 -4 -5 1.8 UNIT .cn mi e V V V A A IC Collector Current-Continuous ICM Collector Current-Peak Total Power Dissipation @ Ta=25 PC Total Power Dissipation @ TC=25 TJ Junction Temperature 40 W 150 Tstg Storage Temperature Range -45~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB689 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= -100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -4 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -1.0 V ICEO Collector Cutoff Current VCE= -80V; RBE= -100 A IEBO Emitter Cutoff Current VEB= -3.5V; IC= 0 -50 A hFE-1 DC Current Gain IC= -0.5A; VCE= -4V hFE-2 DC Current Gain w w scs .i w IC= -50mA; VCE= -4V .cn mi e 50 25 250 350 isc Websitewww.iscsemi.cn 2 |
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