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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-3 package Complement to type 2N5301/5302/5303 Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applications. PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N4398 2N4399 2N5745 Fig.1 simplified outline (TO-3) and symbol Collector Absolute maximum ratings(Ta=ae ) SYMBOL VCBO PARAMETER 2N4398 2N4399 2N5745 Collector-base voltage VCEO INCH Base current Collector-emitter voltage ANG 2N4398 2N4399 2N5745 SEM E Open emitter DUC ICON CONDITIONS VALUE -40 -60 -80 TOR UNIT V -40 -60 -80 V Open base VEBO IC IB PD Tj Tstg Emitter-base voltage 2N4398/4399 Collector current 2N5745 Open collector -5 -30 V A -20 -7.5 TC=25ae 200 200 -65~200 ae ae A W Total power dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ae /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N4398 VCEO(SUS) Collector-emitter sustaining voltage 2N4399 2N5745 VCEsat-1 Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage 2N4398/4399 IC=-10A; IB=-1A 2N5745 2N4398/4399 IC=-15A ;IB=-1.5A 2N5745 2N4398/4399 2N5745 IC=-20A ;IB=-2A IC=-0.2A ;IB=0 SYMBOL 2N4398 2N4399 2N5745 CONDITIONS MIN -40 -60 -80 TYP. MAX UNIT V -0.75 V -1.0 -1.0 V -1.5 -2.0 IC=-20A ;IB=-4A IC=-30A ;IB=-6A IC=-10A; IB=-1A -1.7 IC=-15A ;IB=-1.5A IC=-20A ;IB=-2A IC=-20A ;IB=-4A -4.0 -1.6 V V V VCEsat-2 VCEsat-3 VCEsat-4 VBEsat-1 Collector-emitter saturation voltage Only for 2N4398 2N4399 Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage 2N4398/4399 2N5745 VBEsat-2 VBEsat-3 2N5745 2N5745 2N5745 2N4398/4399 2N4398/4399 VBE-1 VBE-2 ICEX ICEO IEBO hFE-1 hFE-2 INCH GE S AN 2N4398/4399 2N4398/4399 2N5745 IC=-15A ; VCE=-2V EMIC DUC ON TOR -1.85 -2.0 -2.5 -1.7 -1.5 -3.0 V V V IC=-10A ; VCE=-2V IC=-30A ; VCE=-4V IC=-20A ; VCE=-4V VCE= Rated VCEO; VBE(off)=-1.5V TC=150ae VCE=Rated VCEO; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-2V 40 15 V -2.5 -5 -10 -5.0 -5.0 mA mA mA Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain 2N5745 DC current gain 2N4398/4399 2N5745 IC=-10A ; VCE=-2V 60 IC=-15A ; VCE=-2V IC=-20A ; VCE=-2V 5 IC=-30A ; VCE=-4V 4 IC=-1A ; VCE=-10V;f=1.0MHz MHz 2 hFE-3 DC current gain 2N4398/4399 2N4398/4399 2N5745 fT Transition frequency 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N4398 2N4399 2N5745 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
Price & Availability of 2N5745
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