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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2429 DESCRIPTION *With TO-3 package *High voltage ,high speed *Wide area of safe operation APPLICATIONS *High speed switching *Converters and inverters PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS MAX 450 400 7 15 20 5 150 175 -65~175 UNIT V V V A A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=1A ; RBE= IE=1mA ; IC=0 IC=10A; IB=2A IC=10A; IB=2A VCB=450V; IE=0 VEB=6V; IC=0 IC=10A ; VCE=5V IC=2A ; VCE=10V,f=10MHz IE=0 ; VCB=10V;f=1MHz 10 MIN 400 7 2SC2429 TYP. MAX UNIT V V 0.45 1.2 1.0 2.0 0.1 0.1 V V mA mA 15 35 230 40 MHz pF Switching times tr tstg tf Rise time Storage time Fall time VCC=150V,IC=10A IB1=-IB2=2A 0.15 1.20 0.10 0.5 2.5 0.3 s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2429 Fig.2 Outline dimensions 3 |
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