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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area APPLICATIONS Designed for switching and wide-band amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6372 2N6373 2N6374 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL PARAMETER CONDITIONS 2N6372 2N6373 VCBO Collector-base voltage VCEO CHA IN Emitter-base voltage Collector current GE S N 2N6374 2N6372 2N6373 2N6374 Open emitter EMIC OND TOR UC VALUE 90 70 50 80 60 40 UNIT V Collector-emitter voltage Open base V VEBO IC PD Tj Tstg Open collector 6 6 V A W ae ae Total Power Dissipation Junction temperature Storage temperature TC=25ae 40 150 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.37 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N6372 VCEO(SUS) Collector-emitter sustaining voltage 2N6373 2N6374 VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage IC=2A; IB=0.2A IC=6A; IB=0.6A IC=2A; IB=0.2A IC=6A; IB=0.6A VCE=80V; IB=0 VCE=60V; IB=0 VCE=40V; IB=0 IC=0.1A ;IB=0 2N6372 2N6373 2N6374 SYMBOL CONDITIONS MIN 80 60 40 TYP. MAX UNIT V 0.7 1.2 1.2 2.0 V V V V ICEO Collector cut-off current 2N6372 2N6373 2N6374 ICBO IEBO Collector cut-off current Emitter cut-off current HAN INC SEM GE VEB=6V; IC=0 OND IC TOR UC 0.1 10 0.1 |I mA VCB=Rated VCB; IE=0 A mA 2N6372 hFE DC current gain 2N6373 2N6374 fT Transition frequency IC=2A ; VCE=2V IC=2.5A ; VCE=2V IC=3A ; VCE=2V IC=0.5A;VCE=10V;f=1MHz 4 MHz 20 100 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6372 2N6373 2N6374 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions 3 |
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