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| SMD Type Silicon Schottky Barrier Diode HSM276S Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 High forward current, Low capacitance. HSM276ASR which is interconnected in series configuration is designed for balanced mixer use. MPAK package is suitable for high density surface mounting and high speed assembly. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r R e v e rs e v o lta g e A v e ra g e re c tifie d c u rre n t J u n c tio n te m p e ra tu re S to ra g e te m p e ra tu re S ym bol VR IO Tj T s tg V a lu e 3 30 125 -5 5 to + 1 2 5 U n it V mA Electrical Characteristics Ta = 25 Parameter Reverse voltage Reverse current Forward current Capacitance Capacitance deviation ESD-Capability (Note 1) Note 1. Failure criterion ; IR 100 A at VR =0.5 V Symbol VR IR IF C AC Conditions IR =1.0 mA VR =0. 5 V VR =0. 5 V VR = 0.5V, f = 1 MHz VR = 0.5V, f = 1 MHz C=200pF, R= 0 Both forward and 30 35 0.90 0.10 Min 3 50 Typ Max Unit V A mA pF pF V reverse direction 1 pulse. Marking Marking C2 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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