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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION *DC Current Gain -hFE = 40(Min)@ IC= 5A *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- BDT85F; 120V(Min)- BDT87F *Complement to Type BDT82F/84F/86F/88F APPLICATIONS *Designed for use in audio output stages and general amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER BDT81F BDT83F VCBO Collector-Base Voltage BDT85F BDT87F BDT81F BDT83F VCEO Collector-Emitter Voltage BDT85F BDT87F VEBO IC ICM IB B BDT81F/83F/85F/87F VALUE 60 80 UNIT V 100 120 60 80 V 100 120 7 15 20 4 36 150 -65~150 V A A A W Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25 Junction Temperature Storage Temperature Range PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 6 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER BDT81F BDT83F IC= 30mA; IB= 0 BDT85F BDT87F VCE(sat)-1 VCE(sat)-2 VBE(on) ICES ICBO IEBO hFE-1 hFE-2 fT Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product IC= 5A; IB= 0.5A B BDT81F/83F/85F/87F CONDITIONS MIN 60 80 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 100 120 1.0 1.6 1.5 1 0.2 0.1 40 40 10 MHz V V V mA mA mA IC= 7A; IB= 0.7A B IC= 5A ; VCE= 4V VCE= 0.8VCBOmax; VBE= 0 VCB= VCBOmax; IE= 0 VEB= 7V; IC= 0 IC= 50mA ; VCE= 10V IC= 5A ; VCE= 4V IC= 0.5A ; VCE= 10V Switching Times ton toff Turn-On Time IC= 7A; IB1= -IB2= 0.7A Turn-Off Time 2 s 1 s isc Websitewww.iscsemi.cn |
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