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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC940 DESCRIPTION With TO-3 package High current capability Wide area of safe operation APPLICATIONS For B/W TV horizontal deflection application PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER ANG INCH Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature Collector-base voltage EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 200 90 7 7.5 15 UNIT V V V A A W ae ae Tmb=25ae 50 150 -65~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC940 SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 90 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=1mA ; IC=0 IC=5A; IB=0.5A 7 V Collector-emitter saturation voltage 1.5 V ICBO Collector cut-off current VCB=90V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=5V 15 70 fT Transition frequency hFE-2 Classifications O 15-35 Q 25-45 P 35-70 IC=0.5A ; VCE=10V 20 MHz HAN INC SEM GE OND IC TOR UC 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC940 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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