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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA914 DESCRIPTION *With TO-126 package *Complement to type 2SC1953 *Good linearity of hFE *High VCEO APPLICATIONS *For audio frequency power pre-amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base * Absolute Maximun Ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -50 -100 1 150 -55~150 UNIT V V V mA mA W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA914 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-0.1mA;IB=0 -150 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=-10A ;IC=0 IC=-30mA ;IB=-3mA -5 V Collector-emitter saturation voltage -1.0 V A A ICBO Collector cut-off current VCB=-100V; IE=0 -1 IEBO Emitter cut-off current VEB=-5V; IC=0 -1 hFE DC current gain IC=-10mA ; VCE=-5V 90 450 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 5 pF fT Transition frequency IE=10mA ; VCB=-10V 200 MHz hFE Classifications Q 90-155 R 130-220 S 185-330 T 260-450 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA914 Fig.2 Outline dimensions 3 |
Price & Availability of 2SA914
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