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| SMD Type HEXFET Power MOSFET KRF9610S TO-263 Features + .1 1 .2 7 -00.1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Surface Mount Available in Tape & Reel Fast Switching + .2 5 .2 8 -00.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 Simple Drive Requirements 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 P-Channel + .2 8 .7 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ -10V,Tc = 25 Continuous Drain Current, VGS @ -10V,Tc = 100 Pulsed Drain Current*1 Power Dissipation Tc = 25 Power Dissipation (PCB Mount) Ta = 25 Linear Derating Factor Linear Derating Factor (PCB Mount) *3 Gate-to-Source Voltage Inductive Current,.Clamp Peak Diode Recovery dv/dt *2 Operating Junction and Storage Temperature Range Junction-to-Case Junction-to-Ambient ( PCB Mounted) *3 Junction-to-Ambient VGS ILM dv/dt TJ,TSTG R R R JC JA JA Symbol ID ID IDM PD Rating -1.8 -1 -7 20 3 0.16 0.025 20 -7 -5 -55 to + 150 6.4 40 62 Unit A W W/ V A V/ns /W /W /W *1Repetitive rating; pulse width limited by max. junction temperature. *2 ISD -1.8A, di/dt 70A/ s, VDD V(BR)DSS,TJ 150 * 3 When mounted on 1" square PCB 5 .6 0 Dynamic dv/dt Rating 1 gate 1 Gate 2 drain 2 Drain 3 source 3 Source www.kexin.com.cn 1 SMD Type KRF9610S Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Intermal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time *1 Pulse width 300 s; duty cycle 2%. Body Diode) Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss IS ISM VSD trr Qrr ton TJ = 25 , IS = -1.8A, VGS = 0V*1 TJ = 25 , IF = -1.8A di/dt = 100A/ s*1 VGS = 0V VDS = -25V f = 1.0MHz Symbol V(BR)DSS V(BR)DSS/ Transistors IC Testconditons VGS = 0V, ID =- 250 A TJ ID = -1mA,Reference to 25 VGS = -10V, ID = -0.9A*1 VDS = VGS, ID = -250 A VDS = -50V, ID = -0.90A*1 VDS = -200V, VGS = 0V VDS = -160V, VGS = 0V, TJ = 125 Min -200 Typ Max Unit V -0.23 3.0 -2.0 0.90 -100 -500 -100 100 11 7.0 4.0 8.0 15 10 8.0 4.5 7.5 170 50 15 -1.8 -4.0 V/ RDS(on) VGS(th) gfs IDSS V S A IGSS VGS = 20V VGS = -20V ID = -3.5A VDS = -160V VGS = -10V,*1 VDD = -100V ID = -0.90A RG =50 RD =110 *1 nA nC ns nH pF A Body Diode) *2 -7.0 -5.8 240 1.7 360 2.69 V ns C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) *2 Repetitive rating; pulse width limited bymax 2 www.kexin.com.cn |
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