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| FDS8670 30V N-Channel PowerTrench(R) MOSFET January 2008 FDS8670 30V N-Channel PowerTrench(R) MOSFET General Description This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low Rds(on) has been maintained to provide an extremely versatile device. tm Features * * * * * 21 A, 30 V Max RDS(ON) = 3.7 m @ VGS = 10 V Max RDS(ON) = 5.0 m @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) and gate charge Minimal Qgd (5.5 nC typical) 100% RG tested (0.9 typical) 100% UIL tested RoHS Compliant Applications * High Efficiency DC-DC Converters: * Notebook Vcore Power Supply * Telecom Brick Synchronous Rectifier * Multi purpose Point Of Load * D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS ID PD VGSS Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 30 20 (Note 1a) Units V V A W 21 105 2.5 1.2 1 433 -55 to +150 (Note 1a) (Note 1b) (Note 1c) EAS TJ, TSTG Single Pulse Avalanche Energy (Note 3) Operating and Storage Junction Temperature Range mJ C Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 C/W Package Marking and Ordering Information Device Marking FDS8670 (c)2008 Fairchild Semiconductor Corporation Device Reel Size 13'' Tape width 12mm Quantity 2500 units FDS8670 Rev D1 (W) FDS8670 Electrical Characteristics Symbol BVDSS TA = 25C unless otherwise noted FDS8670 30V N-Channel PowerTrench(R) MOSFET Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 250 A Min Typ Max Units 30 39 1 100 1 1.4 -5 3.3 4.2 4.4 118 4040 1730 160 0.2 0.9 12 11 56 68 1.5 21 20 90 108 82 42 3.7 5.0 5.5 3 V mV/C A nA V mV/C m Off Characteristics BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 20 V, VDS = VGS, VGS = 0 V VDS = 0 V ID = 250 A On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance ID = 250 A, Referenced to 25C VGS = 10 V, ID = 21 A VGS = 4.5 V, ID = 18 A VGS=10 V, ID =21 A, TJ=125C VDS = 10 V, ID = 21 A gFS Ciss S pF pF pF ns ns ns ns nC nC nC nC 1.2 V ns A nC Dynamic Characteristics Input Capacitance Coss Crss RG td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd VSD trr IRM Qrr Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 15 V, f = 1.0 MHz f = 1.0 MHz V GS = 0 V, Switching Characteristics Turn-On Delay Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Rise Time VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Total Gate Charge at VGS = 10V Total Gate Charge at VGS = 5V Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Voltage Diode Reverse Recovery Time VDD = 15 V, ID = 21 A 58.5 30 9.5 5.5 Drain-Source Diode Characteristics and Maximum Ratings VGS = 0 V, IS = 2.1 A (Note 2) 0.7 51 1.5 37 Diode Reverse Recovery Current Diode Reverse Recovery Charge IF = 21 A, dIF/dt = 100 A/s Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50/W when 2 mounted on a 1 in pad of 2 oz copper b) 105/W when 2 mounted on a .04 in pad of 2 oz copper c) 125/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. Starting TJ = 25C, L = 3mH, IAS = 17A, VDD = 30V, VGS = 10V FDS8670 Rev D1 (W) FDS8670 30V N-Channel PowerTrench(R) MOSFET Typical Characteristics 105 87.5 ID, DRAIN CURRENT (A) 70 52.5 35 17.5 0 0 VGS = 10V 6.0V 4.5V 3.5V 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.4 VGS = 2.5V 2.8 2.2 1.6 3.0V 3.5V 4.0V 4.5V 2.5V 1 6.0V 10V 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2 0.4 0 35 70 ID, DRAIN CURRENT (A) 105 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.011 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 21A VGS = 10V 1.4 ID = 10.5A 0.008 1.2 1 TA = 125oC 0.005 0.8 TA = 25oC 0.002 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 105 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 1000 IS, REVERSE DRAIN CURRENT (A) VGS = 0V VDS = 5V 100 10 1 0.1 0.01 25oC -55oC ID, DRAIN CURRENT (A) 70 TA = 125oC 35 TA =125oC -55oC 0.001 0 1 25 C o 0.0001 3.5 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS8670 Rev D1 (W) FDS8670 30V N-Channel PowerTrench(R) MOSFET Typical Characteristics (continued) 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 21A 8 5000 f = 1MHz VGS = 0 V 4000 CAPACITANCE (pF) VDS = 10V 20V Ciss 6 15V 4 3000 2000 Coss 2 1000 Crss 0 0 10 20 30 40 Qg, GATE CHARGE (nC) 50 60 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) 100 Figure 8. Capacitance Characteristics. SINGLE PULSE RJA = 125C/W TA = 25C ID, DRAIN CURRENT (A) 100 RDS(ON) LIMIT 10 10s VGS = 10V SINGLE PULSE RJA = 125oC/W TA = 25 C o 100s 1ms 10ms 100ms 1s 80 60 1 DC 40 0.1 20 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 125 C/W P(pk) 0.01 0.1 0.1 0.05 0.02 t1 0.01 t2 SINGLE PULSE TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS8670 Rev D1 (W) FDS8670 30V N-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * tm FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP-SPMTM Power220(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. D 2. A critical component in any component of a life support, device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I33 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDS8670 Rev D1 (W) |
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