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 Ordering number : ENA0368
6HP04MH
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
6HP04MH
Features
*
General-Purpose Switching Device Applications
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --60 20 --120 --480 0.6 150 --55 to +150 Unit V V mA mA W C C
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=--1mA, VGS=0V VDS=-60V, VGS=0V VGS=16V, VDS=0V VDS=-10V, ID=--100A VDS=-10V, ID=--60mA ID=--60mA, VGS=--10V ID=--30mA, VGS=--4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --60 --1 10 --1.2 100 180 5.1 6.8 13.5 3.4 1.3 36.5 38.0 455 160 6.6 9.6 --2.6 typ max Unit V
A A
V mS pF pF pF ns ns ns ns
Marking : QB
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70306 / 51506PE MS IM TB-00002267 No. A0368-1/4
6HP04MH
Continued from preceding page.
Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=--30V, VGS=-10V, ID=--120mA VDS=--30V, VGS=-10V, ID=--120mA VDS=--30V, VGS=-10V, ID=--120mA IS=--120mA, VGS=0V Ratings min typ 1.6 0.4 0.16 --0.85 --1.2 max Unit nC nC nC V
Package Dimensions unit : mm 7019A-003
2.0 0.15
Switching Time Test Circuit
VIN
VDD= --30V
0.25
0V --10V VIN 0 to 0.02 PW=10s D.C.1% ID= --60mA RL=500 VOUT
3
2.1 1.6
D
Rg
1
0.25
0.65
2
0.3
G
0.85
P.G
6HP04MH 50
S
0.07
1 : Gate 2 : Source 3 : Drain SANYO : MCPH3
Rg=5k
--120
ID -- VDS
0V .0V --8 .
--4
. --3
--120
ID -- VGS
VDS= --10V
.0
0V
--100
.0V -10
--100
.0V
V
Drain Current, ID -- mA
Drain Current, ID -- mA
--5
--80
--80
--1 5
--60
--2.5 V GS=
V
--60
0 0 --0.2 --0.4 --0.6 --0.8 --1.0 IT10865
0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5
Drain-to-Source Voltage, VDS -- V
14
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
14
Ta= 7
--20
--20
25C --25C
--40
--40
5C
IT10866
RDS(on) -- Ta
Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- --60mA
10
Static Drain-to-Source On-State Resistance, RDS(on) --
12
12
10
8
8
6
ID= --30mA
6
4V = -V GS V A, --10 30m S= = -G ID A, V 60m = -ID
4
4
2 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
2 0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT10867
Ambient Temperature, Ta -- C
IT10868
No. A0368-2/4
6HP04MH
7
yfs -- ID
VDS= --10V
Forward Transfer Admittance, yfs -- mS
5 3 2
--1000 7 5 3 2
IS -- VSD
VGS=0V
Source Current, IS -- mA
100 7 5 3 2
= Ta
--2
C 5
C 75
25
C
--100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 --0.2 --0.4
10 --1.0
2
3
5
7 --10
2
3
5
7 --100
2
3
5
7
Ta=7 5
--0.6
--25C
--0.8
C
25C
--1.0
--1.2
--1.4 IT10870
Drain Current, ID -- mA
1000 7
IT10869 3 2
SW Time -- ID
td(off)
Ciss, Coss, Crss -- VDS
f=1MHz Ciss
Diode Forward Voltage, VSD -- V
VDD= --30V VGS= --10V Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
5 3 2
10 7 5
tf
100 7 5 3 2 --0.01 2 3 5 7 2 3 5 7
Coss
3 2
tr
td(on)
1.0 7
Crss
--0.1
0
--5
--10
--15
--20
--25
--30 IT10872
Drain Current, ID -- A
--10 --9
IT10871 7 5 3
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
ASO
Gate-to-Source Voltage, VGS -- V
VDS= --30V ID= --120mA Drain Current, ID -- A
IDP= --480mA
PW10s
1m s
--8 --7 --6 --5 --4 --3 --2 --1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
10 ms
2
10 0m
ID= --120mA
s
DC
--0.1 7 5 3 2
e op ion rat 25 a= (T C )
Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm)
2 3 5 7 --1.0 2 3 5 7 --10 2 3
--0.01 --0.1
Total Gate Charge, Qg -- nC
0.7
IT10873
PD -- Ta
M
Drain-to-Source Voltage, VDS -- V
5 7 --100 IT10874
Allowable Power Dissipation, PD -- W
0.6
ou
0.5
nt
ed
on
0.4
ac
er
am
ic
bo
0.3
ar
d
(9
00
m
0.2
m2 !
0.
8m
0.1 0 0 20 40 60 80 100 120
m
)
160
140
Ambient Temperature, Ta -- C
IT10875
No. A0368-3/4
6HP04MH
Note on usage : Since the 6HP04MH is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of May, 2006. Specifications and information herein are subject to change without notice.
PS No. A0368-4/4


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Newark

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6HP04MH-TL-E
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onsemi Mosfet, P-Ch, -60V, -0.37A, Sc-70Fl; Transistor Polarity:P Channel; Continuous Drain Current Id:-370Ma; Drain Source Voltage Vds:-60V; On Resistance Rds(On):3.1Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.6V; Power Rohs Compliant: Yes |Onsemi 6HP04MH-TL-W BuyNow
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DigiKey

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Rochester Electronics

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onsemi 6HP04 - Small Signal Field-Effect Transistor, 0.1A, 60V, P-Channel ' 1000: USD0.0581
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100: USD0.0642
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TME

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onsemi Transistor: P-MOSFET; unipolar; -60V; -0.37A; Idm: -1.48A; 0.6W 3000: USD0.109
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