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| SMD Type NPN Epitaxial Silicon Transistor 2SC3663 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Low-voltage, low-current, low-noise and high-gain NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz Ideal for battery drive of pagers, compact radio equipment cordless phones, etc. Gold electrode gives high reliability. 0-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Mini mold package, ideal for hybrid ICs. Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 15 8 2 5 50 150 -65 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Insertion Power Gain Maximum Available Gain Noise Figure Associated Power Gain Collector Capacitance Symbol ICBO IEBO hFE fT |S21e| 2 Testconditons VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 250 PA, pulse VCE = 1 V, IC = 1 mA VCE = 1 V, IC = 1 mA, f = 1 GHz VCE = 1 V, IC = 1 mA, f = 1 GHz VCE = 1 V, IC = 250 iA, f = 1.0 GHz VCE = 1 V, IC = 250 iA, f = 1.0 GHz VCB = 1 V, IE = 0, f = 1.0 MHz Min Typ +0.1 0.38-0.1 Max 0.1 0.1 Unit iA iA 50 100 4 250 GHz dB dB 4.5 dB dB 0.6 pF 4.0 6.5 12.5 3.0 3.5 0.4 MAG NF GA C Marking Marking R62 www.kexin.com.cn 1 |
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