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Datasheet File OCR Text:

SMD Type
Transistors IC
NPN Epitaxial Planar Silicon Transistor 2SC3661
SOT-23
Unit: mm
Low frequency general-purpose amplifiers, drivers, muting circuit.
+0.1 2.4-0.1
Adoption of FBET process. High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat) High VEBO (VEBO 15V). 0.5V).
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
Features
+0.1 2.9-0.1 +0.1 0.4-0.1
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Icp PC Tj Tstg Rating 30 25 15 300 500 200 125 -55 to +125 Unit V V V mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 20V, IE=0 VEB = 10V, IC=0 VCE =5V , IC = 10mA VCE = 10V , IC = 10mA VCB = 10V , f = 1.0MHz 800 1500 250 2.7 0.12 0.85 30 25 15 0.5 1.2 Min Typ Max 0.1 0.1 3200 MHz pF V V V V V Unit iA iA
VCE(sat) IC = 200mA , IB = 4mA VBE(sat) IC = 200mA , IB = 4mA V(BR)CBO IC = 10iA , IE = 0 V(BR)CEO IC = 1mA , IB = 0 V(BR)EBO IE = 10iA , IC = 0
Marking
Marking FY
+0.1 0.38-0.1
0-0.1
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Price & Availability of 2SC3661

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SC3661-U-TB-E 74AK3964	onsemi	Each \|Onsemi 2SC3661-U-TB-E	5000: USD0.085	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SC3661-TB-E 2156-2SC3661-TB-E-600057-ND	Rochester Electronics LLC	2SC3661 - NPN EPITAXIAL PLANAR S	1567: USD0.19	39000
2SC3661-TB-E 2156-2SC3661-TB-E-ND	Rochester Electronics LLC	NPN SILICON TRANSISTOR	1567: USD0.19	39000
2SC3661-U-TB-E 2156-2SC3661-U-TB-E-ND	Rochester Electronics LLC	BIP NPN 0.3A 25V	5323: USD0.06	27000

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SC3661	SANYO Semiconductor Co Ltd	300 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR	1: USD0.25	1512

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SC3661-TB-E	SANYO Semiconductor Co Ltd	2SC3661 - NPN Epitaxial Planar Silicon Transistor For High Hfe, Low-Frequency General-Purpose Amp Applications '	1000: USD0.1644 500: USD0.1741 100: USD0.1818 25: USD0.1895 1: USD0.1934	39000
2SC3661-TB-E	onsemi	2SC3661 - NPN Epitaxial Planar Silicon Transistor For High Hfe, Low-Frequency General-Purpose Amp Applications '	1000: USD0.1644 500: USD0.1741 100: USD0.1818 25: USD0.1895 1: USD0.1934	601000
2SC3661-U-TB-E	onsemi	2SC3661 - Bipolar NPN Transistor, 0.3A 25V '	1000: USD0.0484 500: USD0.0512 100: USD0.0535 25: USD0.0558 1: USD0.0569	27000

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SC3661-TB-E	MFG UPON REQUEST			6

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