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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB555 2SB556
DESCRIPTION With TO-3 package Complement to type 2SD425/426 High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION
Absolute maximum ratings(Ta=ae )
SYMBOL PARAMETER
ANG CH
2SB555 2SB556 2SB555 Open base
CONDITIONS
VCBO
Collector-base voltage
VCEO
IN
SEM E
Open emitter
OND IC
TOR UC
VALUE -140 -120 -140
UNIT
V
Collector-emitter voltage
V -120
2SB556 Open collector
VEBO IC IE PC Tj Tstg
Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature
-5 -12 12
V A A W ae ae
TC=25ae
100 150 -65~150
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS
2SB555 2SB556
SYMBOL
MIN
TYP.
MAX
UNIT
2SB555 V(BR)CEO Collector-emitter breakdown voltage 2SB556 IC=-0.1A ;IB=0
-140 V -120
V(BR)EBO
Emitter-base breakdown voltage
IE=-10mA ;IC=0
-5
V
2SB555 VCEsat Collector-emitter saturation voltage 2SB556
IC=-7A; IB=-0.7A -3.0 IC=-6A; IB=-0.6A V
VBE
Base-emitter on voltage
IC=-7A ; VCE=-5V
-2.5
V
ICBO
Collector cut-off current
IEBO
Emitter cut-off current

VCB=-50V; IE=0
-0.1
mA
VEB=-5V; IC=0
hFE
DC current gain
COB
Output capacitance
fT
Transition frequency
HAN INC
SEM GE
IC=-2A ; VCE=-5V
OND IC
40
TOR UC
-0.1 140 330 6
mA
IE=0 ; VCB=-10V; f=1.0MHz
pF
IC=-2A ; VCE=-5V
MHz
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB555 2SB556
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 outline dimensions (unindicated tolerance:A
0.1mm)
3


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