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| VSLB3940 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs, DDH FEATURES * Package type: leaded * Package form: T-1, clear epoxy * Dimensions: O 3 mm * Peak wavelength: p = 940 nm * High speed * High radiant power * High radiant intensity 94 8636 * Angle of half intensity: = 22 * Low forward voltage * Suitable for high pulse current operation * Good spectral matching to Si photodetectors DESCRIPTION VSLB3940 is a high speed infrared emitting diode in GaAlAs, DDH technology, molded in a clear plastic package. * Lead (Pb)-free component * Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS * Infrared remote control units PRODUCT SUMMARY COMPONENT VSLB3940 Ie (mW/sr) 65 (deg) 22 p (nm) 940 tr (ns) 15 Note Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE VSLB3940 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 5000 pcs, 5000 pcs/bulk PACKAGE FORM T-1 ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 C, unless otherwise specified t 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB tp/T = 0.1, tp = 100 s tp = 100 s TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 1.0 1.5 160 100 - 25 to + 85 - 40 to + 100 260 300 UNIT V mA A A mW C C C C K/W www.vishay.com 288 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81931 Rev. 1.0, 30-Sep-08 VSLB3940 High Speed Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs, DDH Vishay Semiconductors 180 120 100 80 PV - Power Dissipation (mW) 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21318 IF - Forward Current (mA) RthJA = 300 K/W 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 RthJA = 300 K/W 21317 Tamb - Ambient Temperature (C) Tamb - Ambient Temperature (C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of radiant power Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of p Rise time Fall time Virtual source diameter Note Tamb = 25 C, unless otherwise specified IF = 30 mA IF = 30 mA IF = 30 mA IF = 100 mA, 20 % to 80 % IF = 100 mA, 20 % to 80 % TEST CONDITION IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s IF = 1 mA IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 mW/cm2 IF = 100 mA, tp = 20 ms IF = 100 mA, tp = 20 ms IF = 1 mA IF = 100 mA SYMBOL VF VF TKVF TKVF IR CJ Ie e TKe TKe p TKp tr tf d 32 70 65 40 - 1.1 - 0.51 22 940 25 0.25 15 15 2 110 MIN. 1.15 TYP. 1.35 2.2 - 1.5 - 1.1 10 MAX. 1.6 UNIT V V mV/K mV/K A pF mW/sr mW %/K %/K deg nm nm nm ns ns mm Document Number: 81931 Rev. 1.0, 30-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 289 VSLB3940 Vishay Semiconductors BASIC CHARACTERISTICS Tamb = 25 C, unless otherwise specified 1000 180 High Speed Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs, DDH Ie rel - Relative Radiant Intensity (%) IF = 1 mA 160 140 120 IF = 100 mA 100 80 60 tp = 20 ms 40 - 60 - 40 - 20 0 20 40 60 80 100 IF - Forward Current (mA) 100 10 tp = 100 s tp/T= 0.001 1 0 1 2 3 21534 VF - Forward Voltage (V) 21444 Tamb - Ambient Temperature (C) Fig. 3 - Forward Current vs. Forward Voltage Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature 110 VF, rel - Relative Forward Voltage (%) 100 108 106 104 102 100 98 96 94 92 90 - 40 - 20 0 20 40 60 80 100 IF = 1 mA tp = 20 ms IF = 100 mA IF = 10 mA e rel - Relative Radiant Power (%) 90 80 70 60 50 40 30 20 10 0 840 880 920 960 1000 1040 IF = 30 mA 21443 Tamb - Ambient Temperature (C) 21445 - Wavelength (nm) Fig. 4 - Relative Forward Voltage vs. Ambient Temperature Fig. 7 - Relative Radiant Power vs. Wavelength 1000 0 10 20 30 Ie rel - Relative Radiant Intensity Ie - Radiant Intensity (mW/sr) 40 1.0 0.9 0.8 50 60 70 80 0.7 0.6 0.4 0.2 0 100 10 tp = 100 s tp/T= 0.001 1 10 100 1000 21441 21442 IF - Forward Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Intensity vs. Angular Displacement www.vishay.com 290 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81931 Rev. 1.0, 30-Sep-08 - Angular Displacement VSLB3940 High Speed Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs, DDH PACKAGE DIMENSIONS in millimeters Vishay Semiconductors A C 0.15 3.2 R 1.4 (sphere) 0.3 0.1 4.5 3.5 (2.5) < 0.6 0.5 30.3 5.8 0.3 Area not plane 2.9 0.1 0.25 0.4 + 0.15 - 0.05 0.6 0.15 2.54 nom. technical drawings according to DIN specifications Drawing-No.: 6.544-5255.01-4 Issue: 6; 24.07.08 95 10913 1.5 Document Number: 81931 Rev. 1.0, 30-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 291 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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