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New Product SUM90N03-2M2P Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) () 0.0022 at VGS = 10 V 0.0027 at VGS = 4.5 V ID (A)a, e 90 90 Qg (Typ) 82 nC FEATURES * TrenchFET(R) Power MOSFET * 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS * OR-ing * Server D TO-263 G G DS S N-Channel MOSFET Top View Ordering Information: SUM90N03-2M2P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C Continuous Drain Current (TJ = 175 C) TC = 70 C TA = 25 C TA = 70 C Pulsed Drain Current Avalanche Current Pulse Single Pulse Avalanche Energy Continuous Source-Drain Diode Current L = 0.1 mH TC = 25 C TA = 25 C TC = 25 C Maximum Power Dissipation TC = 70 C TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IAS EAS IS ID Symbol VDS VGS Limit 30 20 90a, e 90e 33b, c 29.8b, c 200 36 64.8 90 a, e Unit V A V A 3.13b, c 250a 175 3.75b, c 2.63b, c - 55 to 175 W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case t 10 s Steady State Symbol RthJA RthJC Typical 32 0.5 Maximum 40 0.6 Unit C/W Notes: a. Based on TC = 25 C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 90 C/W. e. Calculated based on maximum junction temperature. Package limitation current is 90 A. Document Number: 74342 S-71948-Rev. B, 10-Sep-07 www.vishay.com 1 New Product SUM90N03-2M2P Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 20 A, di/dt = 100 A/s, TJ = 25 C IS = 22 A 0.8 52 70.2 27 25 TC = 25 C 90 200 1.2 78 105 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 15 V, RL = 0.625 ID 24 A, VGEN = 4.5 V, Rg = 1 VDD = 15 V, RL = 0.555 ID 27 A, VGEN = 10 V, Rg = 1 f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 32 A VDS = 15 V, VGS = 4.5 V, ID = 29 A VDS = 15 V, VGS = 0 V, f = 1 MHz 12065 1725 970 171 81.5 34 29 1.4 18 11 70 10 55 180 55 12 2.1 27 17 105 15 83 270 83 18 ns 257 123 nC pF VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 A ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 32 A VGS = 4.5 V, ID = 29 A VDS = 15 V, ID = 32 A 90 0.0018 0.0022 160 0.0022 0.0027 1.5 30 35 - 7.5 2.5 100 1 10 V mV/C V nA A A S Symbol Test Conditions Min Typ Max Unit Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74342 S-71948-Rev. B, 10-Sep-07 New Product SUM90N03-2M2P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 90 VGS = 10 thru 4 V 75 ID - Drain Current (A) ID - Drain Current (A) 2.4 3.0 60 1.8 45 1.2 TC = 125 C 0.6 30 15 VGS = 2 V 0 0.0 VGS = 3 V TC = 25 C 0.0 - 55 C 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Output Characteristics 600 TC = 25 C 500 G fs - Transconductance (S) TC = 125 C rDS(on) - Drain-to-Source On-Resistance () 0.0030 Transfer Characteristics 0.0025 VGS = 4.5 V 0.0020 VGS = 10 V 0.0015 400 300 TC = - 55 C 200 100 0 0 10 20 30 40 50 60 70 80 90 0.0010 0 15 30 45 60 75 90 ID - Drain Current (A) ID - Drain Current (A) Transconductance 15000 V G S - Gate-to-Source Voltage (V) 10 rDS(on) vs. Drain Current ID = 32 A 12000 C - Capacitance (pF) 8 VDS = 15 V 6 Ciss 9000 6000 Coss 3000 4 VDS = 24 V 2 0 0 Crss 6 12 18 24 30 0 0 30 60 90 120 150 180 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Document Number: 74342 S-71948-Rev. B, 10-Sep-07 Gate Charge www.vishay.com 3 New Product SUM90N03-2M2P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1.6 VGS = 10 V, ID = 32 A VGS = 4.5 V, ID = 29.8 A rDS(on) - On-Resistance (Normalized) IS - Source Current (A) 1.4 10 100 1.2 1 T J = 150 C 1.0 0.1 T J = 25 C 0.8 0.01 0.6 - 50 0.001 - 25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1 TJ - Junction Temperature (C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature 0.004 ID = 32 A rDS(on) - On-Resistance () TA = 125 C 0.003 2.4 2.8 Forward Diode Voltage vs. Temperature ID = 250 A 0.002 TA = 25 C 0.001 1.2 VGS(th) (V) 10 2.0 1.6 0.000 0 2 4 6 8 0.8 - 50 - 25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) TJ - Temperature (C) rDS(on) vs. VGS vs. Temperature 1000 Limited by rDS(on)* 100 100 s 1 ms 10 10 ms 100 ms 1 1s 10 s DC Threshold Voltage I D - Drain Current (A) 0.1 0.01 TA = 25 C Single Pulse BVDSS Limited 0.001 0.1 *VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74342 S-71948-Rev. B, 10-Sep-07 New Product SUM90N03-2M2P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 300 300 250 Power Dissipation (W) 250 ID - Drain Current (A) 200 200 150 Package Limited 100 150 100 50 50 0 0 25 50 75 100 125 150 175 0 0 25 50 75 100 125 150 175 TC - Case Temperature (C) TC - Case Temperature (C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 175 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74342 Document Number: 74342 S-71948-Rev. B, 10-Sep-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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