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| BPW96B, BPW96C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES * Package type: leaded * Package form: T-13/4 * Dimensions (in mm): O 5 * Leads with stand-off * High photo sensitivity * High radiant sensitivity 94 8391 * Suitable for visible and near infrared radiation * Fast response times * Angle of half sensitivity: = 20 DESCRIPTION BPW96 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-13/4 plastic package. It is sensitive to visible and near infrared radiation. * Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS * Detector in electronic control and drive circuits PRODUCT SUMMARY COMPONENT BPW96B BPW96C Note Test condition see table "Basic Characteristics" Ica (mA) 2.5 to 7.5 4.5 to 15 (deg) 20 20 0.1 (nm) 450 to 1080 450 to 1080 ORDERING INFORMATION ORDERING CODE BPW96B BPW96C Note MOQ: minimum order quantity PACKAGING Bulk Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-13/4 T-13/4 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 C, unless otherwise specified t3s Connected with Cu wire, 0.14 mm2 tp/T 0.5, tp 10 ms Tamb 47 C TEST CONDITION SYMBOL VCEO VECO IC ICM PV Tj Tamb Tstg Tsd RthJA VALUE 70 5 50 100 150 100 - 40 to + 100 - 40 to + 100 260 350 UNIT V V mA mA mW C C C C K/W Document Number: 81532 Rev. 1.7, 05-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 419 BPW96B, BPW96C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant 200 PV - Power Dissipation (mW) 160 120 RthJA 80 40 0 0 94 8300 20 40 60 80 Tamb - Ambient Temperature (C) 100 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Collector emitter breakdown voltage Collector emitter dark current Collector emitter capacitance Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Collector emitter saturation voltage Turn-on time Turn-off time Cut-off frequency Note Tamb = 25 C, unless otherwise specified Ee = 1 mW/cm2, = 950 nm, IC = 0.1 mA VS = 5 V, IC = 5 mA, RL = 100 VS = 5 V, IC = 5 mA, RL = 100 VS = 5 V, IC = 5 mA, RL = 100 TEST CONDITION IC = 1 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E = 0 SYMBOL V(BR)CEO ICEO CCEO p 0.1 VCEsat ton toff fc 2.0 2.3 180 MIN. 70 1 3 20 850 450 to 1080 0.3 200 TYP. MAX. UNIT V nA pF deg nm nm V s s kHz TYPE DEDICATED CHARACTERISTICS PARAMETER Collector light current TEST CONDITION Ee = 1 mW/cm2, = 950 nm, VCE = 5 V PART BPW96B BPW96C SYMBOL Ica Ica MIN. 2.5 4.5 TYP. 4.5 8 MAX. 7.5 15 UNIT mA mA www.vishay.com 420 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81532 Rev. 1.7, 05-Sep-08 BPW96B, BPW96C Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors BASIC CHARACTERISTICS Tamb = 25 C, unless otherwise specified 104 Ica - Collector Light Current (mA) ICEO - Collector Dark Current (nA) 10 BPW96B Ee = 1 mW/cm 0.5 mW/cm 103 VCE = 20 V 102 0.2 mW/cm 1 0.1 mW/cm 0.05 mW/cm 101 10 94 8304 20 40 60 80 100 0.1 0.1 94 8297 = 950 nm 1 10 100 V CE - Collector Emitter Voltage (V) Tamb - Ambient Temperature (C) Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 5 - Collector Light Current vs. Collector Emitter Voltage 2.0 C CEO - Collector Emitter Capacitance (pF) 10 8 Ica rel - Relative Collector Current 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 20 40 60 80 100 VCE = 5 V Ee = 1 mW/cm2 = 950 nm f = 1 MHz 6 4 2 0 0.1 1 10 100 94 8239 Tamb - Ambient Temperature (C) 94 8301 V CE - Collector Emitter Voltage (V) Fig. 3 - Relative Collector Current vs. Ambient Temperature Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage 10 Ica - Collector Light Current (mA) BPW96C 1 BPW96B 8 ton/toff - Turn-on/Turn-off Time (s) VCE = 5 V RL = 100 = 950 nm 6 4 toff 0.1 V CE = 5 V 2 ton = 950 nm 0.01 0.01 0.1 1 10 Ee - Irradiance (mW/cm2) 0 94 8293 0 2 4 6 8 10 12 14 94 8296 IC - Collector Current (mA) Fig. 4 - Collector Light Current vs. Irradiance Fig. 7 - Turn-on/Turn-off Time vs. Collector Current Document Number: 81532 Rev. 1.7, 05-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 421 BPW96B, BPW96C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant 0 S ()rel - Relative Spectral Sensitivity 10 20 30 1.0 Srel - Relative Radiant Sensitivity 0.8 0.6 0.4 0.2 0 400 600 800 1000 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 94 8348 - Wavelength (nm) 94 8299 Fig. 8 - Relative Spectral Sensitivity vs. Wavelength Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters 0.15 C E 5.75 O5 0.15 Chip position R 0.3 0.15 5 2.4 re) he (sp 0.3 35.3 0.5 12.3 8.6 7.6 (4.8) < 0.7 Area not plane 0.8 1 + 0.2 - 0.1 + 0.2 - 0.1 1.5 0.25 0.5 + 0.2 - 0.1 + 0.15 0.63 2.54 nom. technical drawings according to DIN specifications Drawing-No.: 6.544-5086.01-4 Issue:1; 01.07.96 96 12192 www.vishay.com 422 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81532 Rev. 1.7, 05-Sep-08 - Angular Displacement Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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