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| RJK2009DPM Silicon N Channel MOS FET High Speed Power Switching REJ03G0474-0200 Rev.2.00 Aug.09.2005 Features * Low on-resistance * Low leakage current * High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D G 1. Gate 2. Drain 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 ch-c Tch Tstg Ratings 200 30 40 160 40 160 40 106 60 2.08 150 -55 to +150 Unit V V A A A A A mJ W C/W C C Rev.2.00, Aug.09.2004, page 1 of 6 RJK2009DPM Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 200 -- -- 3.0 20 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 33 0.029 2900 520 66 40 160 120 110 72 16 31 0.9 150 0.8 Max -- 1 0.1 4.5 -- 0.036 -- -- -- -- -- -- -- -- -- -- 1.4 -- -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns C Test conditions ID = 10 mA, VGS = 0 VDS = 200 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 20 A, VDS = 10 V Note4 ID = 20 A, VGS = 10 VNote4 VDS = 25 V, VGS = 0, f = 1 MHz ID = 20 A, VGS = 10 V, RL = 5 , Rg = 10 VDD = 160 V, VGS = 10 V, ID = 40 A IF = 40 A, VGS = 0 Note4 IF = 40 A, VGS = 0, diF/dt = 100 A/s Rev.2.00, Aug.09.2004, page 2 of 6 RJK2009DPM Main Characteristics Power vs. Temperature Derating 80 Pch (W) 1000 300 Maximum Safe Operation Area 60 ID (A) 100 30 10 3 this area is 1 limited by RDS(on) 0.3 0.1 0.03 0.01 Ta = 25C 1 PW = 10 ms (1shot) Operation in 1m 10 s 10 0 s s Channel Dissipation 40 20 Drain Current DC Operation (Tc = 25C) 0 50 100 150 Tc (C) 200 Case Temperature 100 300 1000 30 3 10 Drain to Source Voltage VDS (V) Typical Transfer Characteristics Typical Output Characteristics 100 10 V 7.5 V Pulse Test 7V 100 VDS = 10 V Pulse Test 80 ID (A) Drain Current ID (A) 80 6.5 V 60 6V 60 Drain Current 40 5.5 V VGS = 5 V 40 20 20 Tc = 75C 25C -25C 8 10 VGS (V) 0 4 8 12 Drain to Source Voltage 16 20 VDS (V) 0 2 4 6 Gate to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 4 Drain to Source Saturation Voltage VDS(on) (V) Drain to Source on State Resistance RDS(on) () Pulse Test Static Drain to Source on State Resistance vs. Drain Current 0.1 VGS = 10 V 0.05 3 0.02 0.01 2 ID = 40 A 1 20 A 10 A 0 12 4 8 Gate to Source Voltage 16 20 VGS (V) 0.005 0.002 0.001 1 3 Pulse Test 10 30 100 300 Drain Current ID (A) 1000 Rev.2.00, Aug.09.2004, page 3 of 6 RJK2009DPM Static Drain to Source on State Resistance vs. Temperature 0.2 VGS = 10 V Pulse Test 0.16 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) () 100 30 10 3 75C 1 0.3 0.1 0.1 25C Tc = -25C 0.12 20 A ID = 40 A 10 A 0.08 0.04 0 -25 VDS = 10 V Pulse Test 0.3 1 3 10 ID (A) 30 100 0 25 50 75 100 125 150 Tc (C) Case Temperature Drain Current 1000 Reverse Recovery Time trr (ns) Body-Drain Diode Reverse Recovery Time 100000 30000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz 500 Capacitance C (pF) 200 100 50 20 10 5 2 1 1 di / dt = 100 A / s VGS = 0, Ta = 25C 3 10 30 100 300 1000 Reverse Drain Current IDR (A) Dynamic Input Characteristics 400 16 VGS VDD = 50 V 100 V 160 V 12 VGS (V) 10000 3000 1000 300 100 30 10 Ciss Coss Crss 0 50 100 150 Drain to Source Voltage VDS (V) Switching Characteristics VGS = 10 V, VDD = 100 V PW = 5 s, duty < 1 % RG = 10 10000 VDS (V) ID = 40 A 300 Switching Time t (ns) Drain to Source Voltage Gate to Source Voltage 1000 tf tr 200 VDS 8 td(off) 100 tf td(on) tr 10 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100 100 VDD = 160 V 100 V 50 V 20 40 60 80 4 0 0 100 Gate Charge Qg (nC) Rev.2.00, Aug.09.2004, page 4 of 6 RJK2009DPM Reverse Drain Current vs. Source to Drain Voltage 100 IDR (A) Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Case Temperature 5 VDS = 10 V ID = 10 mA 1 mA 80 60 VGS = 0 V 40 10 V 20 5V Pulse Test 0 0.4 0.8 1.2 1.6 VSD (V) 2.0 Source to Drain Voltage 4 Reverse Drain Current 3 0.1 mA 2 1 0 -25 0 25 50 75 100 125 150 Tc (C) Case Temperature Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 Tc = 25C 1 D=1 0.5 0.2 0.3 0.1 0.1 0.05 0.03 0.01 0.02 0.01 1 tp sho ch - c(t) = s (t) * ch - c ch - c = 2.08C/W, Tc = 25C uls e PDM PW T D= PW T 0.003 0.001 10 100 1m 10 m Pulse Width 100 m PW (s) 1 10 100 Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Vin 10 V V DD = 100 V Vin Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr Rev.2.00, Aug.09.2004, page 5 of 6 RJK2009DPM Package Dimensions JEITA Package Code SC-93 RENESAS Code PRSS0003ZA-A Package Name TO-3PFM / TO-3PFMV MASS[Typ.] 5.2g Unit: mm 5.0 0.3 5.5 0.3 15.6 0.3 3.2 + 0.4 - 0.2 5.0 0.3 19.9 0.3 2.0 0.3 2.7 0.3 0.66 5.45 0.5 + 0.2 - 0.1 21.0 0.5 4.0 0.3 2.6 0.86 3.2 0.3 1.6 0.86 0.2 0.9 + 0.1 - 5.45 0.5 Ordering Information Part Name RJK2009DPM-E Quantity 30 pcs Plastic magazine Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00, Aug.09.2004, page 6 of 6 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0 |
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