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HAT2165N
Silicon N Channel Power MOS FET Power Switching
Preliminary Rev.0.01 Jul.15.2004
Features
* * * * * High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.8 m typ. (at VGS = 10 V)
Outline
LFPAK-i
5678 DDDD 1(S) 2(S) 3(S) 4(G)
4 G
2X XX
8(D) 7(D) 6(D) 5(D)
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
SSS 123
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP EAR Note 2 Pch Note3 ch-C Tch Tstg
Note 2
Ratings 30 20 55 220 55 30 90 (30) (4.17) 150 -55 to +150
Unit V V A A A A mJ W
C/W C C
Rev.0.01, Jul.15.2004, page 1 of 6
HAT2165N
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 20 -- -- 1.0 -- -- 60 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 2.8 3.7 100 5180 1200 380 0.5 33 15 7.1 13 65 60 9.5 0.81 40 Max -- -- 10 1 2.5 3.6 5.6 -- -- -- -- -- -- -- -- -- -- -- -- 1.06 -- Unit V V A A V m m S pF pF pF nc nc nc ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 27.5 A, VGS = 10 V Note4 ID = 27.5 A, VGS = 4.5 V Note4 ID = 27.5 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 55 A VGS = 10 V, ID = 27.5 A VDD 10 V RL = 0.36 Rg = 4.7 IF = 55 A, VGS = 0 Note4 IF = 55 A, VGS = 0 diF/ dt = 100 A/ s
Rev.0.01, Jul.15.2004, page 2 of 6
HAT2165N
Main Characteristics
Power vs. Temperature Derating 40
Pch (W) I D (A)
Maximum Safe Operation Area 500 100
DC
10
30
PW
Op
10
=1
era
1m
10 0 s s
s
0m
n
Channel Dissipation
20
Drain Current
tio
s
10
1 Operation in this area is limited by R DS(on) 0.1 Tc = 25C 1 shot Pulse 0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V)
0
50
100
150 Tc (C)
200
Case Temperature
Typical Output Characteristics 100 10 V 4.5 V Pulse Test 100 3.0 V
(A)
Typical Transfer Characteristics V DS = 10 V Pulse Test 80
I D (A)
80 2.8 V 60 2.6 V 40 2.4 V
ID Drain Current
60 25C Tc = 75C -25C
Drain Current
40
20
20
VGS = 2.2 V
0
2 4 6 Drain to Source Voltage
8 10 VDS (V)
0
1 2 3 Gate to Source Voltage
5 4 V GS (V)
V DS(on) (mV)
Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test
Drain to Source On State Resistance R DS(on) (m )
250
Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test
200 I D = 50 A
5 VGS = 4.5 V 10 V 2
Drain to Source Voltage
150
100 20 A 10 A 0 4 8 12 Gate to Source Voltage 16 20 V GS (V)
50
1 1 3 10 100 300 30 Drain Current I D (A) 1000
Rev.0.01, Jul.15.2004, page 3 of 6
HAT2165N
Static Drain to Source on State Resistance vs. Temperature 8 Pulse Test 6 I D = 10 A, 20 A 50 A 4 V GS = 4.5 V Forward Transfer Admittance vs. Drain Current
Static Drain to Source on State Resistance R DS(on) (m )
Forward Transfer Admittance |yfs| (S)
1000 300 100 30 10 3 1 0.3 0.1 0.1 0.3 1 3 V DS = 10 V Pulse Test 10 30 100 25C 75C Tc = -25C
10 A, 20 A, 50 A 2 10 V
0 -25
0 25 50 75 100 125 150 Case Temperature Tc (C)
Drain Current I D (A)
Body-Drain Diode Reverse Recovery Time 100 10000
Typical Capacitance vs. Drain to Source Voltage Ciss
Reverse Recovery Time trr (ns)
50
Capacitance C (pF)
3000 1000 300 100 30 10 0 5 10 15 20 VGS = 0 f = 1 MHz 25 30 Coss Crss
20 di / dt = 100 A / s V GS = 0, Ta = 25C 0.3 1 3 10 30 100 Reverse Drain Current I DR (A)
10 0.1
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
Switching Characteristics 16
V DS (V)
40
30 V DD = 25 V 20 V DS 10 10 V 5V
12
Switching Time t (ns)
VDD = 5 V 10 V 25 V
V GS (V)
I D = 55 A
V GS
1000 300 100 30 t d(on) 10 tr 3 V GS = 10 V , VDS = 10 V Rg = 4.7 , duty < 1 % tf t d(off)
Drain to Source Voltage
8
4
0
20 40 60 80 Gate Charge Qg (nc)
0 100
Gate to Source Voltage
0.1 0.2 0.5 1 2 5 10 20 50 100 Drain Current I D (A)
Rev.0.01, Jul.15.2004, page 4 of 6
HAT2165N
Reverse Drain Current vs. Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs. Channel Temperature Derating 100 I AP = 30 A V DD = 15 V duty < 0.1 % Rg > 50
100
(A)
80
Reverse Drain Current IDR
10 V 5V V GS = 0
80
60
60
40
40
20 Pulse Test 0 0.4 0.8 1.2 1.6 V SD (V) 2.0
20 0 25
Source to Drain Voltage
50 75 100 125 150 Channel Temperature Tch (C)
Avalanche Test Circuit EAR =
Avalanche Waveform 1 2 L * IAP2 * VDSS VDSS - V DD
V DS Monitor
L I AP Monitor
V (BR)DSS I AP VDD ID V DS
Rg Vin 15 V
D. U. T
50 0 VDD
Switching Time Test Circuit Vin Monitor Rg D.U.T. RL Vin Vin 10 V V DS = 10 V Vout Monitor
Switching Time Waveform 90% 10% 10% 90% td(on) tr 90% td(off) tf 10%
Vout
Rev.0.01, Jul.15.2004, page 5 of 6
HAT2165N
Package Dimensions
Unit: mm
1.27
0.15 0. 4
1.2MAX 0. 5 1.2MAX
0.25 8 7 6 5
3.95
2XX X (Laser Mark )
1
2
3
4 0. 2
0.1MAX 1.1MAX
5.3MAX
1.27 0.15
0. 4
6.2MAX
0. 5
Package Code JEDEC JEITA Mass (reference value)
LFPAK-i -- -- 0.080 g
Rev.0.01, Jul.15.2004, page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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