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| SI4908DY New Product Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 FEATURES ID (A)a 5.0 4.7 5.6 56 rDS(on) (W) 0.060 at VGS = 10 V 0.070 at VGS = 4.5 V Qg (Typ) D TrenchFETr Power MOSFET D 100 % Rg Tested APPLICATIONS D CCFL Inverter D1 D2 RoHS COMPLIANT SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: SI4908DY-T1-E3 (Lead (Pb)-free) S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 _C Continuous Drain Current (TJ = 150 _C) TC = 70 _C TA = 25 _C TA = 70 _C Pulsed Drain Current (10 ms Pulse Width) Source-Drain Source Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0 1 mH 0.1 TC= 25 _C Maximum Power Dissipation TC= 70 _C TA = 25 _C TA = 70 _C Operating Junction and Storage Temperature Range TJ, Tstg PD TC = 25 _C TA = 25 _C IDM IS ISM IAS EAS ID Symbol VDS VGS Limit 40 "16 5 4.7 4.1b, c 3.3b, c 20 2.3 1.5b, c 20 7 2.5 2.75 1.75 1.85b, c 1.18b, c -55 to 150 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Notes a. Based on TC = 25 _C. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 10 sec. d. Maximum under steady state conditions is 120 _C/W. Document Number: 73698 S-60218--Rev. A, 20-Feb-06 www.vishay.com t v 10 sec Steady-State Symbol RthJA RthJF Typ 57 35 Max 67.5 45 Unit _C/W 1 SI4908DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Drain Source On State Resistanceb Forward Transconductanceb VDS DVDS/TJ DVGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VGS = 0 V, ID = 250 mA ID = 250 mA ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "16 V VDS = 40 V, VGS = 0 V VDS = 40 V, VGS = 0 V, TJ = 55 _C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 4.1 A VGS = 4.5 V, ID = 3.8 A VDS = 15 V, ID = 4.1 A 20 0.048 0.056 15 0.060 0.070 0.8 40 40 V -4.6 2.2 100 1 10 nA mA A W S Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf N-Channel VDD = 20 V RL = 4 W V, ID ^ 1 A, VGEN = 4.5 V, Rg = 1 W N-Channel VDD = 20 V RL = 4 W V, ID ^ 1 A, VGEN = 10 V, Rg = 1 W f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 5 A N-Channel N Ch l VDS = 20 V, VGS = 4.5 V, ID = 5 A N-Channel VDS = 20 V, VGS = 0 V, f = 1 MHz 355 50 29 8 3.7 1.1 1.4 3.4 8 20 23 27 74 95 31 33 5.2 13 30 35 42 110 145 48 50 ns W 12 6 nC pF Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Currenta IS ISM VSD trr Qrr ta tb N-Channel IF = 2 A, di/dt = 100 A/ms, TJ = 25 _C IS = 1.5 A 0.8 26 26 13 13 ns TC = 25 _C 2.3 20 1.2 40 40 A V ns nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2 %. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73698 S-60218--Rev. A, 20-Feb-06 SI4908DY New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 4 V I D - Drain Current (A) I D - Drain Current (A) 16 1.2 Vishay Siliconix Transfer Characteristics 1.0 0.8 12 3V 8 0.6 TC = 125 _C 0.4 25 _C -55 _C 4 0.2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 0.08 550 500 rDS(on) - On-Resistance (mW) 0.07 C - Capacitance (pF) 450 400 350 300 250 200 150 0.04 100 50 0.03 0 4 8 12 16 20 0 0 8 Capacitance Ciss 0.06 VGS = 4.5 V VGS = 10 V 0.05 Crss Coss 16 24 32 40 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) ID = 5 A 8 VDS = 10 V rDS(on) - On-Resistance (Normalized) 1.8 2.1 On-Resistance vs. Junction Temperature ID = 5 A VGS = 4.5 V 1.5 VGS = 10 V 1.2 6 VDS = 20 V VDS = 30 V 4 2 0.9 0 0.0 2.5 5.0 7.5 10.0 12.5 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) Document Number: 73698 S-60218--Rev. A, 20-Feb-06 TJ - Junction Temperature (_C) www.vishay.com 3 SI4908DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 10 rDS(on) - Drain-to-Source On-Resistance (W) 0.25 ID = 5 A 0.20 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 1 TJ = 150 _C 0.15 TJ = 25 _C 0.1 0.10 TA = 125 _C 0.05 TA = 25 _C 0.01 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.00 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 50 Single Pulse Power, Junction-to-Ambient 0.2 40 -0.0 Power (W) VGS(th) (V) ID = 5 mA -0.2 30 20 -0.4 ID = 250 mA 10 -0.6 -0.8 -50 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Safe Operating Area, Junction-to-Ambient 100 *Limited by rDS(on) 10 I D - Drain Current (A) 1 1 ms 10 ms 100 ms 0.1 TA = 25 _C Single Pulse 1s 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Document Number: 73698 S-60218--Rev. A, 20-Feb-06 www.vishay.com 4 SI4908DY New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Current De-Rating* 6 Vishay Siliconix 5 ID - Drain Current (A) 4 3 2 1 0 0 25 50 75 100 125 150 TC - Case Temperature (_C) Power De-Rating, Junction-to-Foot 3.5 3.0 1.00 Power Dissipation (W) Power Dissipation (W) 2.5 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 150 0.00 0 1.25 Power De-Rating, Junction-to-Ambient 0.75 0.50 0.25 25 50 75 100 125 150 TC - Case Temperature (_C) TC - Case Temperature (_C) *The power dissipation Pb is based on TJ(max) = 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73698 S-60218--Rev. A, 20-Feb-06 www.vishay.com 5 SI4908DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 120 _C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Case 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73698. www.vishay.com Document Number: 73698 S-60218--Rev. A, 20-Feb-06 6 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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