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Freescale Semiconductor Technical Data
Document Number: MRFE6S9060N Rev. 1, 10/2007
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. * Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 21.1 dB Drain Efficiency -- 33% ACPR @ 750 kHz Offset -- - 45.7 dBc in 30 kHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness GSM EDGE Application * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 21 Watts Avg., Full Frequency Band (920 - 960 MHz) Power Gain -- 20 dB Drain Efficiency -- 46% Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM -- 1.5% rms GSM Application * Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts, Full Frequency Band (920 - 960 MHz) Power Gain -- 20 dB Drain Efficiency -- 63% Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Integrated ESD Protection * 225C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Maximum Operation Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ
MRFE6S9060NR1
880 MHz, 14 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFET
CASE 1265- 09, STYLE 1 TO - 270 - 2 PLASTIC
Value - 0.5, +66 - 0.5, + 12 32, +0 - 65 to +150 150 225
Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 60 W CW Case Temperature 78C, 14 W CW Symbol RJC Value (2,3) 0.77 0.88 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2007. All rights reserved.
MRFE6S9060NR1 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) B (Minimum) III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 A) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 450 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.5 Adc) Dynamic Characteristics Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 1.1 33 109 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1 2 0.05 2.2 3 0.27 3 4 0.4 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 10 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg., f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss Gps D ACPR IRL 20 30.5 -- -- 21.1 33 - 45.7 - 18 23 -- - 44 -9 dB % dBc dB (continued)
MRFE6S9060NR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 920 - 960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 21 W Avg., f = 920 - 960 MHz, GSM EDGE Signal Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps D EVM SR1 SR2 -- -- -- -- -- 20 46 1.5 - 62 - 78 -- -- -- -- -- dB % % dBc dBc
Typical CW Performances (In Freescale GSM Test Fixture Optimized for 920 - 960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 60 W, f = 920 - 960 MHz Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point (f = 940 MHz) Gps D IRL P1dB -- -- -- -- 20 63 - 12 67 -- -- -- -- dB % dB W
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, 865 - 900 MHz Bandwidth Video Bandwidth @ 60 W PEP Pout where IM3 = - 30 dBc VBW (Tone Spacing from 100 kHz to VBW) -- 3 -- IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Gain Flatness in 35 MHz Bandwidth @ Pout = 14 W Avg. Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) GF G P1dB -- -- -- 0.27 0.011 0.088 -- -- --
MHz
dB dB/C dBm/C
MRFE6S9060NR1 RF Device Data Freescale Semiconductor 3
B1 R1 VBIAS + C9 RF INPUT + C7 R2 R3 C8 L1 Z10 Z1 C1 C2 C3 C4 C5 Z2 Z3 Z4 Z5 Z6 Z7 Z8 C6 Z9 C10 DUT C11 L2 Z11
B2 + C15 C16 + C17 + C19
R4
VSUPPLY
C18 RF Z15 OUTPUT
Z12
Z13
Z14 C14
C12
C13
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8
0.215 0.221 0.500 0.460 0.040 0.280 0.087 0.435
x 0.065 x 0.065 x 0.100 x 0.270 x 0.270 x 0.270 x 0.525 x 0.525
Microstrip Microstrip Microstrip Microstrip Microstrip x 0.530 Taper Microstrip Microstrip
Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB
0.057 x 0.525 Microstrip 0.360 x 0.270 Microstrip 0.063 x 0.270 Microstrip 0.360 x 0.065 Microstrip 0.170 x 0.065 Microstrip 0.880 x 0.065 Microstrip 0.260 x 0.065 Microstrip Taconic RF - 35 0.030, r = 3.5
Figure 1. MRFE6S9060NR1 Test Circuit Schematic
Table 6. MRFE6S9060NR1 Test Circuit Component Designations and Values
Part B1 B2 C1, C8, C14, C15 C2, C4, C13 C3 C5, C6 C7, C16, C17 C9 C10, C11 C12 C18 C19 L1, L2 R1 R2 R3 R4 Ferrite Bead Ferrite Bead 47 pF Chip Capacitors 0.8 - 8.0 pF Variable Capacitors, Gigatrim 3.0 pF Chip Capacitor 15 pF Chip Capacitors 10 F, 35 V Tantalum Capacitors 100 F, 50 V Electrolytic Capacitor 12 pF Chip Capacitors 4.3 pF Chip Capacitor 0.56 F Chip Capacitor 470 F, 63 V Electrolytic Capacitor 12.5 nH Inductor 1 k, 1/4 W Chip Resistor 560 k, 1/4 W Chip Resistor 12 , 1/4 W Chip Resistor 27 W, 1/4 W Chip Resistor Description Part Number 2743019447 274021447 ATC100B470JT500XT 2729152 ATC100B3R0JT500XT ATC100B150JT500XT T491D106K035AT MCHT101M1HB - 1017 - RH ATC100B120JT500XT ATC100B4R3JT500XT ATC700A561MT150XT EKME630ELL471MK255 A04T - 5 CRCW12061001FKEA CRCW12065600FKEA CRCW120612R0FKEA CRCW120627R0FKEA Manufacturer Fair Rite Fair Rite ATC Johanson ATC ATC Kemet Multicomp ATC ATC ATC Multicomp Coilcraft Vishay Vishay Vishay Vishay
MRFE6S9060NR1 4 RF Device Data Freescale Semiconductor
C7
R2 B1 R3
C19 VDD C16 C17
VGG
R1
B2 C8
R4
C9 L1 C1 C2 C3 C5 C6
C15 L2 CUT OUT AREA C11 C10
C18
C12 C13 C14
C4
TO-270/272 Surface / Bolt down
Figure 2. MRFE6S9060NR1 Test Circuit Component Layout
MRFE6S9060NR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 0 ACPR (dBc), ALT1 (dBc) -5 -10 -15 -20 D, DRAIN EFFICIENCY (%) 0 ACPR (dBc), ALT1 (dBc) -5 -10 -15 -20 675 mA 450 mA 550 mA -60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 21 20 Gps, POWER GAIN (dB) 19 18 IRL 17 16 15 14 820 840 860 880 900 920 940 960 f, FREQUENCY (MHz) ACPR D Gps VDD = 28 Vdc, Pout = 14 W (Avg.) IDQ = 450 mA, N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 40 30 20 -30 -40 -50 -60 -70 980
ALT1
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 14 Watts Avg.
20 D 19 Gps, POWER GAIN (dB) 18 17 IRL 16 15 14 ALT1 13 820 840 860 880 900 920 940 960 f, FREQUENCY (MHz) -60 980 ACPR VDD = 28 Vdc, Pout = 28 W (Avg.) IDQ = 450 mA, N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 Gps 50 40 -20 -30 -40 -50 60
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 28 Watts Avg.
21 550 mA 20 Gps, POWER GAIN (dB) 450 mA 19 350 mA 225 mA IDQ = 675 mA -10 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements -20
-30 IDQ = 225 mA -40 350 mA -50
18
17 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements 16
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRFE6S9060NR1 6 RF Device Data Freescale Semiconductor
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -10 -20 -30 -40 -50 3rd Order -60 5th Order -70 -80 1 7th Order 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 VDD = 28 Vdc, IDQ = 450 mA f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements 0 -10 -20 -30 -40 -50 -60 -70 0.1 IM3-U IM3-L IM5-U IM5-L IM7-U IM7-L VDD = 28 Vdc, Pout = 60 W (PEP) IDQ = 450 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz
1
10
80
TWO-TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products versus Output Power
58 57 Pout, OUTPUT POWER (dBm) 56 55 54 53 52 51 50 49 48 27 28 29 30 31 32 P1dB = 49.41 dBm (87.3 W) P3dB = 50.39 dBm (109.4 W)
Figure 8. Intermodulation Distortion Products versus Tone Spacing
P6dB = 51.31 dBm (135.21 W)
Ideal
Actual VDD = 28 Vdc, IDQ = 450 mA Pulsed CW, 12 sec(on) 1% Duty Cycle, f = 880 MHz 33 34 35 36 37
Pin, INPUT POWER (dBm)
Figure 9. Pulsed CW Output Power versus Input Power
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 65 60 55 50 45 40 35 30 25 20 15 10 5 0 1 -15 -20 -25 25_C -30 85_C -35 -30_C -40 25_C -45 -30_C 85_C -50 -55 -30_C -60 -65 85_C -70 25_C -75 -80 100 TC = -30_C ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc)
VDD = 28 Vdc, IDQ = 450 mA f = 880 MHz, N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 Through 13
ACPR Gps D ALT1 10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power
MRFE6S9060NR1 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
22 21 20 Gps, POWER GAIN (dB) 85_C 19 25_C 18 17 16 15 14 1 10 Pout, OUTPUT POWER (WATTS) CW 100 D VDD = 28 Vdc IDQ = 450 mA f = 880 MHz 85_C 50 40 30 20 10 0 200 Gps TC = -30_C -30_C 25_C 80 70 Gps, POWER GAIN (dB) 60 D, DRAIN EFFICIENCY (%) 22 21 20 19 18 17 VDD = 24 V 16 0 20 40 60 80 100 120 140 Pout, OUTPUT POWER (WATTS) CW 28 V IDQ = 450 mA f = 880 MHz
32 V
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
Figure 12. Power Gain versus Output Power
108
MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 14 W Avg., and D = 32.5%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators by product.
Figure 13. MTTF versus Junction Temperature
MRFE6S9060NR1 8 RF Device Data Freescale Semiconductor
N - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ 1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB)
-10 -20 -30 -40 -50 -60 -70 -80 -90 -100
1.2288 MHz Channel BW .. ... ..... . .. .............................. ............ ............. . . .. . . . . . . . . . . . . . . . . . . -ALT1 in 30 kHz +ALT1 in 30 kHz . . . . Integrated BW Integrated BW .... . . . ............ ........... ...... .... ........ ..... ... . ....... ....... .. ... ....... . .... .... .. . . .. ......... ......... ... . ..... ...... ....... .. ..... . ..... ... ... . .... .... . ..... .... . ..... . .... ......... . .. .. . ...... .... ....... .. ........ -ACPR in 30 kHz +ACPR in 30 kHz .............. . . .. . . ... .... .......... ..... . ............... . ......... .... ........... Integrated BW Integrated BW .. ...... ... . ............ . ..... .. .. .. ...... ....... ...
Figure 14. Single - Carrier CCDF N - CDMA
-110 -3.6 -2.9 -2.2
-1.5 -0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 15. Single - Carrier N - CDMA Spectrum
MRFE6S9060NR1 RF Device Data Freescale Semiconductor 9
Zo = 5
f = 910 MHz f = 910 MHz Zsource Zload f = 850 MHz f = 850 MHz
VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg. f MHz 850 865 880 895 910 Zsource 0.44 - j0.20 0.44 - j0.07 0.45 + j0.50 0.48 + j0.18 0.52 + j0.29 Zload 2.28 + j0.23 2.18 + j0.33 2.20 + j0.47 2.15 + j0.61 2.00 + j0.68
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRFE6S9060NR1 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
MRFE6S9060NR1 RF Device Data Freescale Semiconductor 11
MRFE6S9060NR1 12 RF Device Data Freescale Semiconductor
MRFE6S9060NR1 RF Device Data Freescale Semiconductor 13
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date Oct. 2007 Oct. 2007 * Initial Release of Data Sheet * Added Min value to VDS(on), On Characteristics table, p. 2 Description
MRFE6S9060NR1 14 RF Device Data Freescale Semiconductor
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MRFE6S9060NR1
Document Number: RF Device Data MRFE6S9060N Rev. 1, 10/2007 Freescale Semiconductor
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