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| SK50GB067 Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITOP(R) 3 IGBT Module SK50GB067 SK50GAL067 SK50GAR067 Target Data Freewheeling Diode Inverse Diode Features Module Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications GB GAL GAR 1 05-04-2007 DIL (c) by SEMIKRON SK50GB067 Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITOP(R) 3 IGBT Module SK50GB067 SK50GAL067 SK50GAR067 Target Data This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Features Typical Applications GB GAL GAR 2 05-04-2007 DIL (c) by SEMIKRON SK50GB067 Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 05-04-2007 DIL (c) by SEMIKRON SK50GB067 Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG 4 05-04-2007 DIL (c) by SEMIKRON SK50GB067 UL recognized file no. E 63 532 5 05-04-2007 DIL (c) by SEMIKRON |
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