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SEMiX 453GB12T4s Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMiX(R)3s Trench IGBT Modules SEMiX 453GB12T4s SEMiX 453GAL12T4s SEMiX 453GAR12T4s Target Data Inverse Diode Module Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications Remarks GB GAL GAR 1 27-09-2007 SCT (c) by SEMIKRON SEMiX 453GB12T4s Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMiX(R)3s Trench IGBT Modules Module SEMiX 453GB12T4s SEMiX 453GAL12T4s SEMiX 453GAR12T4s Target Data Features Temperature sensor Typical Applications This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. Remarks This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GB GAL GAR 2 27-09-2007 SCT (c) by SEMIKRON SEMiX 453GB12T4s Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 3 27-09-2007 SCT (c) by SEMIKRON SEMiX 453GB12T4s Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 27-09-2007 SCT (c) by SEMIKRON SEMiX 453GB12T4s 5 27-09-2007 SCT (c) by SEMIKRON |
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