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| NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P1303BVG SOP-8 Lead Free PRODUCT SUMMARY V(BR)DSS 30 RDS(ON) 12.5m ID 10A D G : GATE D : DRAIN S : SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 1 SYMBOL VDS VGS LIMITS 30 20 10 8 50 2.5 1.6 -55 to 150 UNITS V V TC = 25 C TC = 70 C ID IDM A TC = 25 C TC = 70 C PD Tj, Tstg W C SYMBOL RJA TYPICAL MAXIMUM 50 UNITS C / W Pulse width limited by maximum junction temperature. Duty cycle 1% ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = 20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 55 C VDS = 5V, VGS = 10V VGS = 4.5V, ID = 5A VGS = 10V, ID = 10A VDS = 15V, ID = 10A 20 13 9.5 38 20 12.5 m S 30 1 1.5 2.5 100 nA 1 10 A A V LIMITS UNIT MIN TYP MAX 1 AUG-13-2004 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P1303BVG SOP-8 Lead Free DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge2 Gate-Source Charge Gate-Drain Charge2 Turn-On Delay Time Rise Time 2 2 2 Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDS = 15V , RL = 25 ID 1A, VGS = 10V, RGEN = 6 VDS = 0.5V(BR)DSS, VGS = 10V, ID = 10A VGS = 0V, VDS = 15V, f = 1MHz 3100 600 275 43 9.0 7.0 15 9 70 20 30 20 100 80 nS 60 nC pF Turn-Off Delay Time2 Fall Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C) Continuous Current Pulsed Current 3 IS ISM VSD trr IF = 1A, VGS = 0V IF = 2.3A, dlF/dt = 100A / S 50 2.3 4.6 1.1 80 A V nS Forward Voltage1 Reverse Recovery Time 1 2 Pulse test : Pulse Width 300 sec, Duty Cycle 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH "P1303BVG", DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 2 AUG-13-2004 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P1303BVG SOP-8 Lead Free TYPICAL PERFORMANCE CHARACTERISTICS 3 AUG-13-2004 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P1303BVG SOP-8 Lead Free 4 AUG-13-2004 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P1303BVG SOP-8 Lead Free SOIC-8 (D) MECHANICAL DATA mm Dimension Min. A B C D E F G 1.35 0.1 4.8 3.8 5.8 0.38 Typ. 4.9 3.9 6.0 0.445 1.27 1.55 0.175 1.75 0.25 Max. 5.0 4.0 6.2 0.51 H I J K L M N 0 Dimension Min. 0.5 0.18 Typ. 0.715 0.254 0.22 4 8 Max. 0.83 0.25 mm 5 AUG-13-2004 |
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