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| 2SC5858 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858 HORIZONTAL DEFLECTION OUTPUT FOR HDTV, DIGITAL TV, PROJECTION TV High Voltage Low Saturation Voltage High Speed : VCBO = 1700 V : VCE (sat) = 1.5 V (Max) : tf(2) = 0.1 s (Typ.) Unit: mm ABSOLUTE MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1700 750 5 22 44 11 200 150 -55~150 UNIT V V V A A W C C JEDEC JEITA TOSHIBA 2-21F2A Note: Using continuously under heavy loads (e.g. the application of high Weight: 9.75 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-22 2SC5858 ELECTRICAL CHARACTERISTICS (Tc = 25C) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector - Emitter Breakdown Voltage SYMBOL ICBO IEBO V (BR) CEO hFE (1) DC Current Gain hFE (2) hFE (3) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Storage Time Switching Time Fall Time Storage Time Fall Time VCE (sat) VBE (sat) fT Cob tstg(1) tf(1) tstg(2) tf(2) TEST CONDITION VCB = 1700 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 8 A VCE = 5 V, IC = 17 A IC = 17 A, IB = 4.25 A IC = 17 A, IB = 4.25 A VCE = 10 V, IC = 0.1 A VCB = 10 V, IE = 0, f = 1 MHz ICP = 9 A , IB1 (end) = 1.4 A fH = 32 kHz ICP = 8 A, IB1 (end) = 1.2 A fH = 45 kHz MIN 750 30 11 5 TYP. 1.0 2 280 4.5 0.1 3.5 0.1 MAX 1 100 60 19 7.5 1.5 1.5 V V MHz pF s UNIT mA A V s 2 2006-11-22 2SC5858 IC - VCE 20 4.0 3.5 3.0 2.5 16 2.0 1.5 12 1.2 1.0 0.8 0.6 8 0.4 IB = 0.2 A 4 Common emitter Tc = 25 0 0 2 4 6 8 10 Collector current IC (A) Collector-emitter voltage VCE (V) hFE - IC 100 Tc = 100C 25 Common emitter VCE = 5 V DC current gain hFE -25 10 1 0.01 0.1 1 10 100 Collector current IC (A) IC - VBE 20 Common emitter VCE = 5 V 16 Collector current IC (A) 12 Tc = 100C 8 -25 25 4 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-emitter voltage VBE (V) 3 2006-11-22 2SC5858 VCE - IB 10 Common emitter Tc = -25 10 VCE(sat) - IC Common emitter Tc = -25 6 VCE (V) Collector-emitter saturation voltage VCE(sat) (V) 8 1 10 IC/IB = 4 Collector-emitter voltage 6 Ic = 17 A 4 15 10 2 9 8 7 0 11 13 12 14 16 8 0.1 0.01 0 0.8 1.6 2.4 3.2 4.0 1 10 100 Base current IB (A) Collector current IC (A) VCE - IB 10 Common emitter Tc = 25 10 VCE (sat) - IC Common emitter Tc = 25 ollector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE (sat) (V) 8 6 1 IC/IB = 4 6 Ic = 17 A 16 4 10 9 2 8 7 0 0 0.8 1.6 2.4 3.2 4.0 12 11 13 14 15 10 8 0.1 0.01 1 10 100 Base current IB (A) Collector current IC (A) VCE - IB 10 Common emitter Tc = 100 10 VCE (sat) - IC Common emitter Tc = 100 6 1 (V) 8 Collector-emitter saturation voltage VCE (sat) (V) VCE Collector-emitter voltage 6 Ic = 17 A 16 4 10 14 9 2 8 7 0 0 11 12 15 IC/IB = 4 10 8 0.1 0.01 0.8 1.6 2.4 3.2 4.0 1 10 100 Base current IC (A) Collector current IC (A) 4 2006-11-22 rth(j-c) - tw 10 2SC5858 Transient thermal impedance (junction-case) rth(j-c) (C/W) 1 0.1 0.01 Tc = 25 (Infinite heat sink) Curves should be applied in thermal limited area. (single nonrepetitive pulse) 100 1m 10m 100m 1 10 100 1000 0.001 10 Pulse width tw (s) Safe Operating Area 100 IC max (Pulse)* IC max (Continuous)* 10 10 1 ms* 100 s* 10 s* 100 Reverse Bias - Safe Operating Area IC max (Pulse) 495V,44A (A) 10 ms* (A) Collector current IC 1 0.1 1700V,30mA 0.01 Ta = 25 Non repeated pulse IB2 = -3A L = 500 H 1000 0.001 10 100 1000 VCEO max Collector current IC 100 ms* 1 DC operation Tc = 25C 0.1 *:Single nonrepetitive pulse Tc = 25C Curves linearly must with be derated in increase temperature. 0.01 1 10 100 VCBO max 10000 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) PC - Tc 250 Infinite heat sink PC (W) Collector power dissipation 200 150 100 50 0 0 25 50 75 100 125 150 Case temperature Tc (C) 5 2006-11-22 2SC5858 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-22 |
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