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| TSM2312 20V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 5.0A = 33m RDS (on), Vgs @ 2.5V, Ids @ 4.0A = 40m Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. TSM2312CX Packing Tape & Reel Package SOT-23 Absolute Maximum Rating (Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation unless otherwise noted) Symbol VDS VGS ID IDM Ta = 25 C Ta = 75 oC o Limit 20V 8 5 15 1.25 0.8 Unit V V A A W PD Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG +150 - 55 to +150 o o C C Thermal Performance Parameter Lead Temperature (1/8" from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec. Symbol TL Rja Limit 5 100 Unit S o C/W TSM2312 1-1 2003/12 rev. A Electrical Characteristics Ta = 25 oC, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage On-State Drain Current Forward Transconductance Conditions Symbol Min Typ Max Unit VGS = 0V, ID = 250uA VGS = 4.5V, ID = 5.0A VGS = 2.5V, ID = 4.0A VDS = VGS, ID = 250uA VDS = 20V, VGS = 0V VGS = 8V, VDS = 0V VDS 10V, VGS = 4.5V VDS = 5V, ID = 5.0A BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS ID(ON) gfs 20 -- -25 -33 V m -35 40 0.45 --15 -- ----20 -1.0 100 --- V uA nA A S Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10V, VGS = 0V, f = 1.0MHz VDD = 10V, RL = 10, ID = 1A, VGEN = 4.5V, RG = 6 VDS = 10V, ID = 3.6A, VGS = 4.5V Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss ----------11 1.4 2.2 15 40 48 31 900 140 100 14 --25 60 70 45 ---pF nS nC Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 1.0A, VGS = 0V Note : pulse test: pulse width <=300uS, duty cycle <=2% IS VSD ---0.75 1.6 1.2 A V TSM2312 2-2 2003/12 rev. A SOT-23 Mechanical Drawing A B F DIM A B C D E SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.88 2.91 0.113 0.115 0.39 0.42 0.015 0.017 1.78 2.03 0.070 0.080 0.51 0.61 0.020 0.024 1.59 1.66 0.063 0.065 1.04 0.07 1.08 0.09 0.041 0.003 0.043 0.004 E G F G D C TSM2312 3-3 2003/12 rev. A |
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