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 (R)
STF92
SMALL SIGNAL PNP TRANSISTOR
PRELIMINARY DATA
Type STF92
s
Marking 692
s
s s
SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE SOT-89 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS STF42 SOT-89
APPLICATIONS VIDEO AMPLIFIER CIRCUITS (RGB CATHODE CURRENT CONTROL) s TELEPHONE WIRELINE INTERFACE (HOOK SWITCHES, DIALER CIRCUITS)
s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj May 2002 Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T C = 25 C Storage Temperature Max. Operating Junction Temperature
o
Value -300 -300 -5 -0.1 -0.2 1.3 -65 to 150 150
Unit V V V A A W
o o
C C 1/4
STF92
THERMAL DATA
R t hj-amb * Thermal Resistance Junction-Ambient
2
Max
96.1
o
C/W
* Device mounted on a PCB area of 1 cm
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = -200 V V CB = -200 V V CB = -300 V V EB = -5 V I C = -100 A -300 T C = 150
o
Min. C
Typ.
Max. -10 -10 -100 -50
Unit nA A A nA V
I EBO V (BR)CBO
V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance
I C = -10 mA
-300
V
I E = -100 A
-5
V
V CE(sat) V BE(sat) h FE fT C CBO C EBO
I C = -30 mA I C = -30 mA I C = -30 mA IE = 0 IC = 0
I B = -5 mA I B = -5 mA V CE = -10 V V CB = -10 V f = 1 MHz 75 60 6 22
-0.6 -1.2
V V
I C = -15mA V CE = -10V f = 20 MHz
MHz pF pF
V EB = -2 V f = 1 MHz
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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STF92
SOT-89 MECHANICAL DATA
mm MIN. A B B1 C C1 D D1 E e e1 H L 1.4 0.44 0.36 0.35 0.35 4.4 1.62 2.29 1.42 2.92 3.94 0.89 TYP. MAX. 1.6 0.56 0.48 0.44 0.44 4.6 1.83 2.6 1.57 3.07 4.25 1.2 MIN. 55.1 17.3 14.2 13.8 13.8 173.2 63.8 90.2 55.9 115.0 155.1 35.0 mils TYP. MAX. 63.0 22.0 18.9 17.3 17.3 181.1 72.0 102.4 61.8 120.9 167.3 47.2
DIM.
P025H
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STF92
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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