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| ST2001FX HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOR TVS OVER 21 INCHES AND 15 INCHES MONITORS DESCRIPTION The d e vice is m an u fa ctu r ed u sin g Diff us ed Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ISOWATT218FX INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC ICM IB Ptot Vins Tstg Tj October 2003 Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Total Dissipation at Tc = 25 C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 1500 600 7 10 20 7 63 2500 -65 to 150 150 Unit V V V A A A W V C C 1/7 ST2001FX THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2 C/W ELECTRICAL CHARACTERISTICS (Tj = 25 C unless otherwise specified) Symbol ICES IEBO VCEO(sus)* Parameter Collector Cut-off Current (VBE = 0) Emitter Cut-off Current (IC = 0) Collector-Emitter Sustaining Voltage (IB = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain INDUCTIVE LOAD Storage Time Fall Time VCE = 1500 V VCE = 1500 V VEB = 7 V IC = 100 mA 600 Test Conditions Tj = 125 C Min. Typ. Max. 1 2 1 Unit mA mA mA V VCE(sat)* VBE(sat)* hFE* IC = 5 A IC = 5 A IC = 6 A IC = 6 A IC = 5 A IBon (END) = 850 mA LBB(off) = 2 H IB = 1.25 A IB = 1.25 A VCE = 1 V VCE = 5 V VBB(off) = -2.5 V fh = 64 KHz (See Figure 1) 4.5 5 2.6 0.2 1.5 1.2 V V 9 3 0.4 s s ts tf * Pulsed: Pulse duration = 300 s, duty cycle = 1.5 %. 2/7 ST2001FX Safe Operating Area Derating Curve Thermal Impedance Output Characteristics Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/7 ST2001FX DC Current Gain DC Current Gain Power Losses Inductive Load Switchin Times Reverse Biased Safe Operating Area 4/7 ST2001FX Figure 1: Inductive Load Switching Test Circuit 5/7 ST2001FX ISOWATT218FX MECHANICAL DATA mm. MIN. 5.30 2.80 3.10 1.80 0.80 0.65 1.80 10.30 5.45 15.30 9.80 22.80 26.30 43.20 4.30 24.30 14.60 1.80 3.80 3.40 15.70 10.20 23.20 26.70 44.40 4.70 24.70 15.00 2.20 4.20 3.80 0.602 0.386 0.898 1.035 1.701 0.169 0.957 0.575 0.071 0.150 0.134 TYP. MAX. 5.70 3.20 3.50 2.20 1.10 0.95 2.20 11.50 MIN. 0.209 0.110 0.122 0.071 0.031 0.026 0.071 0.406 0.215 0.618 0.402 0.913 1.051 1.748 0.185 0.972 0.591 0.087 0.165 0.150 inch TYP. MAX. 0.224 0.126 0.138 0.087 0.043 0.037 0.087 0.453 DIM. A C D D1 E F F2 G G1 H L L2 L3 L4 L5 L6 L7 N R DIA - Weight : 5.6 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.55 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 mm 6/7 ST2001FX Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 7/7 |
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