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Si7886ADP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.0040 @ VGS = 10 V 0.0048 @ VGS = 4.5 V
ID (A)
25 23
Qg (Typ)
47
D TrenchFETr Power MOSFET D Optimized for "Low Side" Synchronous Rectifier Operation D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested
RoHS
COMPLIANT
Available
APPLICATIONS
PowerPAK SO-8
D DC/DC Converters D Synchronous Rectifiers
5.15 mm
3 S 4 G
6.15 mm
S 1 2 S
D
D 8 7 D 6 D 5 D
G
Bottom View Ordering Information: Si7886ADP-T1 Si7886ADP-T1--E3 (Lead (Pb)-Free) S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Conduction)a L= 0 1 mH 0.1 TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS IAS EAS PD TJ, Tstg
10 secs
30 "12 25 20 60 4.5 50 125 5.4 3.4
Steady State
Unit
V
15 12 A 1.6
mJ 1.9 1.2 W _C
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 73156 S-51016--Rev. B, 23-May-05 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
18 50 1.0
Maximum
23 65 1.5
Unit
_C/W C/W
1
Si7886ADP
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 25 A VGS = 4.5 V, ID = 23 A VDS = 15 V, ID = 25 A IS = 2.9 A, VGS = 0 V 30 0.0032 0.0037 90 0.7 1.1 0.0040 0.0048 0.6 1 1.5 "100 1 5 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W 0.5 VDS = 15 V, VGS = 4.5 V, ID = 25 A 5, 5, 5 VDS = 15 V, Vss = 0 V, f = 1 kHz 6450 873 402 47 12.5 9.0 1.0 17 14 158 43 50 1.5 30 25 230 65 80 ns W 60 nC C p pF
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
60 50 40 30 20 10 0 0 2 4 6 8 10 2V
Output Characteristics
VGS = 10 thru 3 V
60 50 40 30 20
Transfer Characteristics
I D - Drain Current (A)
I D - Drain Current (A)
TC = 125_C 10 0 0.0 25_C -55_C 1.5 2.0 2.5 3.0
0.5
1.0
VDS - Drain-to-Source Voltage (V) www.vishay.com
VGS - Gate-to-Source Voltage (V) Document Number: 73156 S-51016--Rev. B, 23-May-05
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Si7886ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0075
On-Resistance vs. Drain Current
8000 7000
Capacitance
Ciss
r DS(on) - On-Resistance ( W )
0.0060 C - Capacitance (pF)
6000 5000 4000 3000 2000 Coss 1000 Crss
0.0045
VGS = 4.5 V
0.0030 VGS = 10 V 0.0015
0.0000 0 10 20 30 40 50
0 0 5 10 15 20 25 30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
6 V GS - Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 10 20 VDS = 15 V ID = 25 A
Gate Charge
1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 25 A
1.4 rDS(on) - On-Resiistance (Normalized)
1.2
1.0
0.8
30
40
50
60
0.6 -50
-25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50
0.025
On-Resistance vs. Gate-to-Source Voltage
TJ = 150_C 10
r DS(on) - On-Resistance ( W )
0.020
I S - Source Current (A)
0.015
TJ = 25_C
0.010 ID = 25 A 0.005
1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Document Number: 73156 S-51016--Rev. B, 23-May-05
0.000 0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
www.vishay.com
3
Si7886ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4 0.2 V GS(th) Variance (V) -0.0 -0.2 -0.4 -0.6 -0.8 -50 40 Power (W) ID = 250 mA 200
Single Pulse Power, Junction-to-Ambient
160
120
80
-25
0
25
50
75
100
125
150
0 0.001
0.01
0.1 Time (sec)
1
10
TJ - Temperature (_C)
100 *Limited by rDS(on) 10 I D - Drain Current (A)
Safe Operating Area, Junction-to-Case
1 ms 10 ms
1
100 ms 100 s
0.1
10 s TC = 25_C Single Pulse dc
0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified
2 1
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Notes: PDM t1
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 65_C/W
t1 t2
0.01 10-4
Single Pulse 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec)
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 73156 S-51016--Rev. B, 23-May-05
Si7886ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2 1
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5 0.2 0.1
0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73156. Document Number: 73156 S-51016--Rev. B, 23-May-05 www.vishay.com
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