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| Si7463DP Vishay Siliconix P-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -40 FEATURES ID (A) -18.6 -15 rDS(on) (W) 0.0092 @ VGS = -10 V 0.014 @ VGS = -4.5 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile APPLICATIONS D Automotive - 12-V Boardnet - High-Side Switches - Motor Drives S PowerPAK SO-8 6.15 mm S 1 2 S 3 S 5.15 mm G 4 D 8 7 D 6 D 5 D G D P-Channel MOSFET Bottom View Ordering Information: Si7463DP-T1--E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State -40 "20 Unit V -18.6 -15 -60 -4.5 5.4 3.4 -55 to 150 -11 -8.9 A -1.6 1.9 1.2 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72440 S-32411--Rev. B, 24-Nov-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 18 52 1.0 Maximum 23 65 1.3 Unit _C/W C/W 1 Si7463DP Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -40 V, VGS = 0 V VDS = -40 V, VGS = 0 V, TJ = 70_C VDS v -5 V, VGS = -10 V VGS = -10 V, ID = -18.6 A VGS = -4.5 V, ID = -15 A VDS = -15 V, ID = -18.6 A IS = -4.5 A, VGS = 0 V -40 0.0075 0.011 50 -0.8 -1.2 0.0092 0.014 -1 -3 "100 -1 -10 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = -4.5 A, di/dt = 100 A/ms VDD = -20 V, RL = 20 W ID ^ -1 A, VGEN = -10 V, RG = 6 W VDS = -20 V, VGS = -10 V, ID = -18.6 A 121 19.2 30.3 2.7 20 25 200 100 45 30 40 300 150 70 ns W 140 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 60 50 40 30 20 10 0 0 1 Output Characteristics VGS = 10 thru 4 V 60 50 40 30 20 10 0 0.0 Transfer Characteristics I D - Drain Current (A) 3V I D - Drain Current (A) TC = 125_C 25_C -55_C 2 3 4 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 72440 S-32411--Rev. B, 24-Nov-03 2 Si7463DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.016 0.014 r DS(on) - On-Resistance ( W ) C - Capacitance (pF) 0.012 0.010 0.008 0.006 0.004 0.002 0.000 0 10 20 30 40 50 60 VGS = 10 V On-Resistance vs. Drain Current 8000 7000 6000 5000 4000 3000 2000 Capacitance VGS = 4.5 V Ciss Coss 1000 Crss 0 0 8 16 24 32 40 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 18.6 A Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 18.6 A 6 r DS(on) - On-Resistance (W) (Normalized) 50 75 100 125 8 1.4 1.2 4 1.0 2 0.8 0 0 25 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 100 0.04 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) I S - Source Current (A) 0.03 ID = 18.6 A 0.02 TJ = 150_C 10 ID = 5 A TJ = 25_C 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72440 S-32411--Rev. B, 24-Nov-03 www.vishay.com 3 Si7463DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0.6 V GS(th) Variance (V) 0.4 0.2 0.0 -0.2 -0.4 -50 20 ID = 250 mA 80 100 Single Pulse Power, Juncion-To-Ambient Power (W) 60 40 -25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 TJ - Temperature (_C) 100 rDS(on) Limited 10 I D - Drain Current (A) Safe Operating Area IDM Limited P(t) = 0.001 P(t) = 0.01 ID(on) Limited P(t) = 0.1 P(t) = 1 1 0.1 TA = 25_C Single Pulse BVDSS Limited P(t) = 10 dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 52_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72440 S-32411--Rev. B, 24-Nov-03 Si7463DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Document Number: 72440 S-32411--Rev. B, 24-Nov-03 www.vishay.com 5 |
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