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SI6447DQ Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) 0.09 @ VGS = -10 V 0.16 @ VGS = -4.5 V ID (A) "3.2 "2.4 S* TSSOP-8 D S S G 1 2 3 4 Top View D P-Channel MOSFET D SI6447DQ 8 7 6 5 D S S D G * Source Pins 2, 3, 6 and 7 must be tied common. ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a 150 C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C ID TA = 70_C IDM IS PD TJ, Tstg Symbol VDS VGS Limit -20 "20 "3.2 "2.5 "20 -1.7 1.5 Unit V A W 1.0 -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70170 S-00872--Rev. G, 01-May-00 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 83 Unit _C/W 2-1 SI6447DQ Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -20 V, VGS = 0 V VDS = -10 V, VGS = 0 V, TJ = 70_C VDS = -5 V, VGS = -10 V VDS = -5 V, VGS = -4.5 V VGS = -10 V, ID = 3.2 A rDS( ) DS(on) gfs VSD VGS = -4.5 V, ID = 2.0 A VDS = -15 V, ID = -3.2 A IS = -1.7 A, VGS = 0 V -14 A -2.5 0.060 0.100 4.0 -0.9 -1.2 0.09 0.16 W S V -1.0 "100 -1 -5 V nA mA Symbol Test Condition Min Typ Max Unit On-State Drain Currenta ID(on) Drain Source On State Resistancea Drain-Source On-State Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1.7 A, di/dt = 100 A/ms VDD = -10 V, RL = 10 W 10 V, ID ^ -1 A, VGEN = -10 V RG = 6 W 1A 10 V, VDS = -10 V VGS = -10 V ID = -3.2 A 10 V, 10 V, 32 15 3 3.5 13 13 30 13 50 40 25 50 20 100 ns 25 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70170 S-00872--Rev. G, 01-May-00 SI6447DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 5 thru 10 V 8 I D - Drain Current (A) I D - Drain Current (A) 8 10 Transfer Characteristics 6 4V 6 4 4 TC = 125_C 2 25_C -55_C 0 2 3V 0 0 2 4 6 8 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.30 1500 Capacitance r DS(on) - On-Resistance ( W ) 0.24 C - Capacitance (pF) 1200 0.18 VGS = 4.5 V 0.12 VGS = 10 V 0.06 900 Ciss 600 Coss 300 Crss 0 0 4 8 12 16 20 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 3.2 A Gate Charge 1.60 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.2 A 8 r DS(on) - On-Resistance ( W) (Normalized) 6 9 12 15 1.40 6 1.20 4 1.00 2 0.80 0 0 3 0.60 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70170 S-00872--Rev. G, 01-May-00 www.vishay.com S FaxBack 408-970-5600 2-3 SI6447DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 1.0 On-Resistance vs. Gate-to-Source Voltage 10 I S - Source Current (A) r DS(on) - On-Resistance ( W ) 0.8 TJ = 150_C 0.6 TJ = 25_C 0.4 ID = 3.2 A 0.2 1 0.00 0.3 0.6 0.9 1.2 1.5 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.60 50 Single Pulse Power 0.45 V GS(th) Variance (V) ID = 250 mA 0.30 Power (W) 40 30 0.15 20 0.00 10 -0.15 -0.3 -50 0 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 83_C/W 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70170 S-00872--Rev. G, 01-May-00 |
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