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| SI3471DV New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.031 @ VGS = - 4.5 V - 12 0.040 @ VGS = - 2.5 V 0.053 @ VGS = - 1.8 V FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated ID (A) - 6.8 - 6.0 - 5.2 APPLICATIONS D Load Switch D PA Switch (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D P-Channel MOSFET 2.85 mm ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C ID TA = 85_C IDM IS - 1.7 2.0 1.0 - 55 to 150 - 4.9 - 20 - 0.9 1.1 0.6 W _C - 3.7 A Symbol VDS VGS 5 secs Steady State - 12 "8 Unit V - 6.8 - 5.1 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72104 S-03183--Rev. A, 17-Feb-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 55 90 30 Maximum 62.5 110 36 Unit _C/W C/W 1 SI3471DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 9.6 V, VGS = 0 V VDS = - 9.6 V, VGS = 0 V, TJ = 85_C VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 6.8 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 6 A VGS = - 1.8 V, ID = - 3 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 5 V, ID = - 6.8 A IS = - 1.7 A, VGS = 0 V - 20 0.025 0.032 0.041 20 - 0.7 - 1.2 0.031 0.040 0.053 S V W - 0.40 -1 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 1.7 A, di/dt = 100 A/ms VDD = - 6 V, RL = 6 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 6 V, VGS = - 4.5 V, ID = - 6.8 A 18 2.3 4.6 21 50 125 110 50 33 75 190 165 80 ns 33 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 2 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 20 Transfer Characteristics 12 1.5 V 8 12 8 TC = 125_C 4 25_C - 55_C 0 0.0 4 1V 0 0 1 2 3 4 5 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72104 S-03183--Rev. A, 17-Feb-03 www.vishay.com 2 SI3471DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 r DS(on) - On-Resistance ( W ) 2500 Vishay Siliconix Capacitance C - Capacitance (pF) 0.08 2000 Ciss 1500 0.06 VGS = 1.8 V 0.04 VGS = 2.5 V 1000 Coss 0.02 VGS = 4.5 V 500 Crss 0.00 0 4 8 12 16 20 0 0 3 6 9 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 6.8 A 4 1.4 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 6.8 A r DS(on) - On-Resistance (W) (Normalized) 1.3 1.2 3 1.1 2 1.0 1 0.9 0 0 5 10 15 20 Qg - Total Gate Charge (nC) 0.8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 0.10 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.08 0.06 ID = 6.8 A TJ = 150_C TJ = 25_C 0.04 ID = 3 A 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72104 S-03183--Rev. A, 17-Feb-03 www.vishay.com 3 SI3471DV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 40 Single Pulse Power 0.3 V GS(th) Variance (V) ID = 250 mA 0.2 Power (W) 32 24 TA = 25_C 16 0.1 0.0 8 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 10 -2 10 -1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area 1000 rDS(on) Limited IDM Limited 100 I D - Drain Current (A) P(t) = 0.001 P(t) = 0.01 10 ID(on) Limited P(t) = 0.1 P(t) = 1 P(t) = 10 TC = 25_C Single Pulse BVDSS Limited 1 10 100 dc 1 0.1 0.1 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72104 S-03183--Rev. A, 17-Feb-03 SI3471DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72104 S-03183--Rev. A, 17-Feb-03 www.vishay.com 5 |
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