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| SFT6032, SFT6033 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER'S DATA SHEET Part Number / Ordering Information 1/ SFT6032 __ __ __ | | | + Screening 2/ __ = No Screening TX = TX Level TXV = TXV Level S = S Level + Lead Bend 3/ 4/ __ = Straight Leads | | | 50 AMPS 90 - 120 Volts High Power NPN Transistors Features: * * * * * High Frequency transistor with BVCEO to 120 Volts Enhanced SOA capability and Fast Switching | | + Package 3/ /3 = TO-3 0.060" pin High Power Dissipation 140 Watts 200oC Operating Temperature TX, TXV, S-Level Screening Available. Consult Factory Symbol Value 90 120 120 150 7 50 10 140 -65 to +200 1.25 (typ. 0.75) Maximum Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current Base Current Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) TC = 25C SFT6032 SFT6033 SFT6032 SFT6033 Units Volts Volts Volts Amps Amps Watts C C/W VCEO VCBO VEBO IC IB PD TJ & TSTG R0JC TO-3 (/3) .135 MAX 2x O.165 .151 SEATING PLANE .525 MAX .675 .655 2x R.188 MAX 2x .063 .058 2 O.875 MAX .440 .420 2x .225 .205 1 .450 .250 2x .312 MIN 1.197 1.177 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0092A DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT6032 SFT6033 Symbol (IC = 200 mA) SFT6032 SFT6033 (IC = 200 mA, RBE = 50 O) SFT6032 SFT6033 BVCEO BVCER BVCEX ICEO ICBO IEBO ICEX Electrical Characteristics Collector - Emitter Blocking Voltage * Min 90 120 110 140 120 150 -- -- -- -- -- -- -- -- 10 10 5 5 10 -- -- -- -- Max -- -- -- -- -- -- 1 1 1 1 1 1 15 10 50 50 -- -- 40 1.3 1.0 2.5 2.5 1000 Unit s Volts Collector - Emitter Blocking Voltage *(IC = 200 mA, VBE= -1.5 V) SFT6032 SFT6033 Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector Cutoff Current (VCE = 80 V) (VCB = 120 V) SFT6032 (VCB = 150 V) SFT6033 (VEB = 7 V) TA= 25C (VCE = 110 V, VBE= 1.5 V) TA= 25C (VCE = 135 V, VBE= 1.5 V) TA= 150C (VCE = 100 V, VBE= 1.5 V) TA= 150C (VCE = 100 V, VBE= 1.5 V) SFT6032 SFT6033 SFT6032 SFT6033 Volts mA mA mA mA DC Current Gain * IC = 50 A, VCE = 2.6 V, SFT6032 IC = 40 A, VCE = 2 V, SFT6033 IC = 50 A, VCE = 2.6 V, T A=-55C SFT6032 IC = 40 A, VCE = 2 V, T A= -55C, SFT6033 hFE Small Signal Common-Emitter Forward Current Transfer Ratio Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Output Capacitance (IC = 2 A, VCE = 10 V, f = 5 MHz) (IC = 50 A, IB = 5 A) (IC = 40 A, IB = 4 A) (IC = 50 A, IB = 5 A) (IC = 40 A, IB = 4 A) SFT6032 SFT6033 SFT6032 SFT6033 hfe VCE (SAT) VBE (SAT) Cob SOA1a SOA1b SOA2 SOA3 SOA4a SOA4b t(on) t(off) Volts Volts pF VCB = 10 V, IE = 0 A, f = 1.0MHz VCE= 2.8 V, IC= 50 A, t= 1 s, SFT6032 VCE= 3.5 V, IC= 40 A, t= 1 s, SFT6033 VCE= 24 V, IC= 5.8 A, t= 1 s VCE= 40 V, IC= 0.9 A, t= 1 s VCE= 90 V, IC= 0.18 A, t= 1 s, SFT6032 VCE= 120 V, IC= 0.10 A, t= 1 s, SFT6033 Safe Operating Area Turn-on Time Turn-off Time NOTES: * (VCC = 30 V, IC = 50.0 A, IB1 = IB2 = 5.0 A) SFT6032 (VCC = 30 V, IC = 40.0 A, IB1 = IB2 = 4.0 A) SFT6033 -- -- 500 2.0 ns s Pulse Test: Pulse Width = 300sec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Up and Down Bend Configurations are Available for `M' (TO-254) Packages Only. 5/ Unless Otherwise Specified, All Electrical Characteristics @25C. Available Part Numbers: SFT6032/3 SFT6033/3 PIN ASSIGNMENT (Standard) Package Collector Emitter Base Case Pin 2 Pin 3 TO-3 (/3) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0092A DOC |
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