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RF501PS2S
Diodes
Fast recovery diode
RF501PS2S
Applications General rectification External dimensions (Unit : mm)
(8) (7) (6) (5)
Land size figure
Features 1) High power mold type (TSOP8) 2) Low VF 3) Very fast recovery 4) Low switching loss
0.5
4.7 1.1 0.75
4.56
50.1
60.1
00.1
0.5
0.15
0.5
(1)
(2)
(3)
(4)
1.27
0.4 0.1
0.220.05 0.90.05
0.1
0.05
TSOP8
5.00.1
Structure
Construction Silicon epitaxial planar
ROHM : TSOP8 Manufacture Date
Taping dimensions (Unit : mm)
2.00.05 4.00.1 8.00.1 1.550.1 0 1.750.1 0.370.1
5.50.05
12.00.3
5.550.2
1PIN
1.550.05 6.70.2 1.20.2
Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak 60Hz1cyc Junction temperature Storage temperature
Symbol VRM VR Io IFSM Tj Tstg
Limits 200 200 5 70 150 -55 to +150
Unit V V A A
(*1) Mounted on epoxy board. 180Half sine wave
Electrical characteristic (Ta=25C)
Parameter Forward voltage Reverse current Capacitance between terminals
00.5
Symbol VF IR
trr
Min. -
Typ. 0.86 0.02 14
Max. 0.92 1 30
Unit V A ns
Conditions IF=5A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR
5.550.2
9.50.1
6.6
1/3
RF501PS2S
Diodes
Electrical characteristic curves
10 Ta=150 Ta=75
100 10000
Ta=150 Ta=125
1000 f=1MHz
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
200
1 Ta=125 0.1 Ta=75 Ta=25 Ta=-25 0.01
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
1000
100
Ta=25
10
Ta=-25
1
10
0.001
0 100 200 300 400 500 600 700 800 900 100 0
0.1 0 50 100 150 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS
1 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30
FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
890 Ta=25 Ta=25 IF=3A IF=5A n=30pcs n=30pcs
100 90 Ta=25 Ta=25 VR=200 VR=200V V n=30pcs n=30pcs
200 Ta=25 f=1MHz VR=0V n=10pcs
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
70 60 50 40 30 20 10 AVE:10.7nA AVE:4.60nA
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
880
80
190
870
180
860 AVE:859.4mV 850 AVE:856.6mV
170 AVE:174.9pF 160
840 VF DISPERSION MAP
0 IR DISPERSION MAP
150 Ct DISPERSION MAP
300
30
1000 Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm
PEAK SURGE FORWA CURRENT:I FSM(A) RD
PEAK SURGE FORWARD CURRENT:IFSM(A)
250 200 150
RESERVE RECOVERY TIME:trr(ns)
Ifsm
1cyc 8.3ms
25 20 15 10 5 0 AVE:14.5ns
100
8.3ms 8.3ms 1cyc
AVE:167.0A 100 50 0 IFSM DISRESION MAP
10
1 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
1000
1000
Mounted on epoxy board IM=100mA IF=2.5A
10
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
Ifsm
PEAK SURG E FORWARD CURRENT:IFSM(A)
t
8
FORWARD POWER DISSIPATION:Pf(W)
100
1ms time 300us
D=1/2 6 Sin(180) 4 DC
Rth(j-a)
100
10 Rth(j-c)
2
10 1 10 100
1 0.001
0 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 100 1000 0 2 4 6 8 10
TIME:t(ms) IFSM-t CHARACTERISTICS
AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS
2/3
RF501PS2S
Diodes
10
10 0A 0V t D=1/2 DC Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=100V Tj=150 8 D=1/2 6 DC
0A 0V t T
Io VR D=t/T VR=100V Tj=150
30 No break at 30kV 25 20 15 10 5 0 No break at 30kV
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
6
T
4
4
Sin(180)
2
Sin(180)
2
0 0 25 50 75 100 125 150
0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) CASE TEMPARATURE:Tc() Derating Curve(Io-Tc)
ELECTROSTATIC DISCHARGE TEST ESD(KV)
8
C=200pF R=0
C=100pF R=1.5k
ESD DISPERSION MAP
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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